Ring part structure and machining method thereof

A processing method and ring technology, which is applied in the ring structure and its processing field, can solve the problems of spalling and tip discharge particles, and achieve the possible effects of reducing the tip, improving the service life, and reducing the phenomenon of peeling of attached particles
CN106521433AInactive Publication Date: 2017-03-22KONFOONG MATERIALS INTERNATIONAL CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2017-03-22
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides a ring part structure and a machining method thereof. The machining method comprises the following steps: providing a ring part of which the surface is provided with patterns; and roughening the patterned surface of the ring part. According to the machining method provided by the invention, the patterned surface of the ring part is further roughened to increase the roughness degree of the patterned surface of the ring part, to reduce tips on the patterned surface of the ring part and to increase the adsorption capacity of the patterned surface of the ring part, and thus the possibility of occurrences of tip discharge of the patterned surface of the ring part and peeling of adsorbed particles is reduced, so the service life of the ring part is prolonged, product rejection caused by peeling of the adsorbed particles is reduced, and the product yield is increased.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a ring structure and a processing method thereof. Background technique

[0002] The semiconductor sputtering process is one of the most critical process steps in the production process of semiconductor chips. Its purpose is to deposit metal or metal compounds in the form of thin films on silicon wafers or other substrates, and then cooperate with photolithography and etching processes. , eventually forming a complex wiring structure in the semiconductor chip. The sputtering process is mainly completed by the sputtering machine, and the ring structure is one of the consumables in the sputtering machine.

[0003] Specifically, refer to figure 1 , shows a schematic structural diagram of a sputtering device in the prior art.

[0004] The sputtering target 10 is arranged above the surface 11 to be deposited, and the ring 12 is arranged between the sputtering target 10 and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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