3results about How to "Reduce tip discharge" patented technology

This utility model belongs to the field of power system technology and discloses a disconnecting switch and switchgear. The disconnecting switch is installed on the cabinet of the switchgear, which contains a busbar and a grounding bar. The disconnecting switch includes an operating rod, a conductive rod, and a transmission assembly. The operating rod slides through the cabinet, and the conductive rod slides on the inner cone of the voltage transformer. Pushing or pulling the operating rod moves the conductive rod, which in turn moves the conductive rod through the transmission assembly. This allows the conductive rod to connect with the busbar via a pin to achieve closing or with the grounding bar to achieve opening. By setting pins at both ends of the conductive rod and an elastic element between the conductive rod and the pins, the pins connect with the busbar or grounding bar under the action of the elastic element. This ensures a tight connection and also disperses the charge to reduce the charge density at the tip, thereby reducing the possibility of tip discharge and effectively improving the stability of the disconnecting switch in the power system.

The invention relates to a shielded gate trench metal oxide semiconductor field effect transistor and a source polysilicon manufacturing method thereof. The shielded gate trench metal oxide semiconductor field effect transistor comprises a drain substrate, an epitaxial layer arranged on the drain substrate and a trench. An oxide layer covers the inner wall of the trench, a source polysilicon is arranged in the trench, a gate oxide layer is arranged on the source polysilicon, and a gate polysilicon is arranged on the gate oxide layer. The oxide layer on the lower two sides of the first polycrystalline silicon comprises a step structure formed by two sections of wet etching, and the corner of the source polycrystalline silicon is passivated by means of the two sections of wet etching processes and the two sections of dry etching processes so as to solve point discharge.

The invention provides a method for improving electric leakage of a source electrode and a grid electrode of a trench gate product, and the method comprises the steps: sequentially forming an oxide layer and an etching stop layer on a substrate, and forming a deep trench on the etching stop layer, a first oxide layer below the etching stop layer and the substrate; forming a first gate dielectric layer on the deep trench, and then forming a source polysilicon layer formed at the bottom of the deep trench by using a deposition and back etching method; a first isolation dielectric layer and a second isolation dielectric layer for filling the remaining deep trench are sequentially formed, the first dielectric layer does not fully fill the deep trench, and the etching rate of the second isolation dielectric layer is higher than that of the first isolation dielectric layer; the first isolation dielectric layer and the second isolation dielectric layer are ground to the etching stop layer, the etching stop layer is removed, the first isolation dielectric layer, the second isolation dielectric layer and the first gate dielectric layer are etched, and a dielectric layer between the source polycrystalline silicon and the gate polycrystalline silicon is formed; and forming a second gate dielectric layer in the remaining deep trench by using a thermal oxidation method, and forming a gate polycrystalline silicon layer for filling the remaining deep trench. Gate and source electric leakage can be improved.