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A photosensitive memory based on quantum dot organic field effect transistor and its preparation method

A technology of quantum dots and transistors, applied in the field of photosensitive memory based on quantum dot organic field effect transistors and its preparation, can solve the problems of difficult device size reduction, narrow absorption spectrum, high operating voltage, etc., and reduce the dependence of operating voltage and absorption spectrum The effect of widening and improving storage density

Active Publication Date: 2019-02-01
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Technical problem to be solved: the present invention mainly proposes a photosensitive memory based on quantum dot organic field effect transistor and its preparation method, which solves the problems in the prior art that it is difficult to reduce the size of the device, the operating voltage is high, the absorption spectrum is narrow, and it is difficult to integrate. question

Method used

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  • A photosensitive memory based on quantum dot organic field effect transistor and its preparation method
  • A photosensitive memory based on quantum dot organic field effect transistor and its preparation method
  • A photosensitive memory based on quantum dot organic field effect transistor and its preparation method

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Embodiment 1

[0030] Such as figure 1 As shown, the first step: prepare a lead sulfide solution, the solvent is toluene, the concentration of the solution is 1 mg / ml, and it is allowed to stand for 30 minutes to make it evenly dispersed;

[0031] Step 2: Select a highly doped silicon wafer as the substrate 6, and sequentially form a gate electrode 5 and a gate insulating layer 4 on the substrate 6. The gate electrode 5 is made of highly doped silicon, and the gate insulating layer 4 is made of silicon dioxide. The thickness of the gate insulating layer 4 is 50nm, and the substrate is made. The substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, and the ultrasonic frequency is 100 KHz. Then, the liquid on the substrate surface is blown dry with high-purity nitrogen. The surface of the substrate is clean, and then it is dried in an oven at 120°C;

[0032] The third step: Place the dried clean substrate in a UV ozone machine and treat it with UV ozone for ...

Embodiment 2

[0043] Step 1: Prepare a PbSe quantum dot solution with toluene as the solvent and a concentration of 1 mg / ml. Let it stand for 30 min to make it evenly dispersed;

[0044] Step 2: Select a highly doped silicon wafer as the substrate 6, and sequentially form a gate electrode 5 and a gate insulating layer 4 on the substrate 6. The gate electrode 5 is made of highly doped silicon, and the gate insulating layer 4 is made of silicon dioxide. The thickness of the gate insulating layer 4 is 50nm, and the substrate is made. The substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, and the ultrasonic frequency is 100 KHz. Then, the liquid on the substrate surface is blown dry with high-purity nitrogen. The surface of the substrate is clean, and then it is dried in an oven at 120°C;

[0045] The third step: Place the dried clean substrate in a UV ozone machine and treat it with UV ozone for 3 minutes;

[0046] The fourth step: in the air, spin-coat th...

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Abstract

The invention discloses a photosensitive memory based on a quantum dot organic field effect transistor. The structure of the photosensitive memory based on a quantum dot organic field effect transistor is a source-drain electrode, an organic photosensitive semiconductor layer, a quantum dot thin film layer, and a gate from top to bottom. Insulating layer, gate electrode and substrate; without increasing the complexity of the process and on the premise of simple equipment preparation, it can effectively improve the collection efficiency of the device for incident light, enhance the photoelectric conversion efficiency, and reduce the contact resistance and charge tunneling potential barrier, thereby reducing the dependence on the operating voltage, reducing energy consumption, and providing a feasible idea for the commercialization of organic photosensitive memory. The memory structure improves the storage performance and photosensitive performance of the photosensitive memory at the same time; the memory structure can be adopted Metal copper is used as the source and drain electrodes of the device, which reduces the cost of device preparation and is convenient for popularization and application.

Description

Technical field [0001] The invention belongs to the field of memory technology and light detection technology in the semiconductor industry, and in particular relates to a photosensitive memory based on quantum dot organic field effect transistors and a preparation method thereof. Background technique [0002] As the basic components in electronic circuits, organic field-effect transistors have the characteristics of wide material sources, softness and simple processing technology, and can be applied to large-area printing processes, which are very suitable for the development direction of the next generation of wearable electronics industry. At the same time, the structure of the organic field effect transistor determines that it has rich functional applications, such as light emitting, storage, sensing, switching, etc., so it has a wide range of application prospects in the field of information electronics. [0003] As a multi-functional integrated device, Organic Photosensitive ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/10H01L27/28H01L27/30
CPCH10K39/30H10K19/10H10K10/46H10K10/84
Inventor 仪明东李焕群解令海
Owner NANJING UNIV OF POSTS & TELECOMM
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