Plasma processing equipment and cleaning system and method thereof

Abstract

The invention relates to plasma processing equipment and a cleaning system and method thereof. A mobile ring is arranged at the inner side of a chamber wall of a reaction chamber and an electrode is arranged in the mobile ring; the electrode communicates with a radio frequency power supply through a selector switch, so that edge plasma is formed in an edge region within a plasma diffusion range limited by the mobile ring; or the electrode communicates with a ground circuit through the selector switch, so that a radio frequency electric field formed in the reaction chamber is shielded on the chamber wall of the reaction chamber. According to the plasma processing equipment, the cleaning effect on edge components of the chamber can be strengthened, or the effect of shielding a radio frequency of the chamber wall to improve eccentric etching is achieved.

Description

technical field [0001] The invention relates to the field of plasma processing, in particular to a plasma processing device and its cleaning system and method. Background technique [0002] Plasma processing equipment introduces reaction gas containing appropriate etchant or deposition source gas into the vacuum reaction chamber, and then applies radio frequency energy to the reaction chamber to dissociate the reaction gas to generate plasma, which is used to place Process the substrate surface in the reaction chamber. [0003] Taking the plasma processing device for etching process as an example, such as figure 1 As shown, the first electrode is usually arranged at the shower head 30 for introducing reaction gas at the top of the reaction chamber 10, and the second electrode is arranged below the base 50 for carrying and holding the substrate at the bottom of the reaction chamber 10. Electrode, RF power is applied to the first electrode or the second electrode, so as to o...

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Problems solved by technology

[0006] However, since the field strength at the edge of the first electrode and the second electrode will be affected by the edge conditions, a part of the electric field line will be bent, causing the field strength at the edge of the electric field to be uneven, so that the density of the plasma at the edge of the reaction chamber is controlled by the electric field Low, it is difficult to form enough plasma to clean the edge parts of the chamber (such as the above-mentioned moving ring, confinement ring, cover ring, etc.), and the residual polymer will cause arcing or form particles (Particle) Risk of potential contamination to subsequent substrate processing

[0007] In addition, since the moving ring protecting the cavity wall is made of insulating material (such as quartz), it cannot effectively shield the RF electric field

Therefore, although the distribution of the moving ring itself on the edge of the chamber is symmetrical, if the metal cavity wall outside the moving ring is asymmetrical (for example, because a channel opening is provided on the side of the cavity wall to facilitate the manipulator to take and place the substrate), then the radio frequency The distribution will be asymmetric within the confinement range of the moving ring, resulting in uneven distribution of plasma, which will lead to eccentricity of etching when the substrate is processed.

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