Plasma processing equipment and cleaning system and method thereof

Abstract

The invention relates to plasma processing equipment and a cleaning system and method thereof. A mobile ring is arranged at the inner side of a chamber wall of a reaction chamber and an electrode is arranged in the mobile ring; the electrode communicates with a radio frequency power supply through a selector switch, so that edge plasma is formed in an edge region within a plasma diffusion range limited by the mobile ring; or the electrode communicates with a ground circuit through the selector switch, so that a radio frequency electric field formed in the reaction chamber is shielded on the chamber wall of the reaction chamber. According to the plasma processing equipment, the cleaning effect on edge components of the chamber can be strengthened, or the effect of shielding a radio frequency of the chamber wall to improve eccentric etching is achieved.

Description

technical field

[0001] The invention relates to the field of plasma processing, in particular to a plasma processing device and its cleaning system and method. Background technique

[0002] Plasma processing equipment introduces reaction gas containing appropriate etchant or deposition source gas into the vacuum reaction chamber, and then applies radio frequency energy to the reaction chamber to dissociate the reaction gas to generate plasma, which is used to place Process the substrate surface in the reaction chamber.

[0003] Taking the plasma processing device for etching process as an example, such as figure 1 As shown, the first electrode is usually arranged at the shower head 30 for introducing reaction gas at the top of the reaction chamber 10, and the second electrode is arranged below the base 50 for carrying and holding the substrate at the bottom of the reaction chamber 10. Electrode, RF power is applied to the first electrode or the second electrode, so as to o...

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