Device and method for adjusting device temperature in plasma etching chamber

Abstract

The invention relates to a device for adjusting a device temperature in a plasma etching cavity and a temperature adjustment method. The temperature adjustment device is arranged in the plasma etching cavity and comprises an insulation sealing assembly, wherein the insulation sealing assembly is arranged in an insulation ring and is connected with a gas supply unit through a gas passage, a plurality of channel spaces are arranged in the insulation sealing assembly and communicate with the gas supply unit through the gas passage, the insulation sealing assembly, the gas passage and the gas supply unit form a closed space, the gas supply unit is used for adjusting gas pressures in the channel spaces by releasing or recycling inert gas so that the thermal conductivity of the insulation sealing assembly is adjusted, and the temperature of a focusing ring is controlled to be higher than the temperature of a substrate by 50-100 DEG C. By the temperature adjustment device, and the temperature adjustment device is simpler and more effective in temperature adjustment of a device in the plasma etching cavity, better in heat conduction effect and is also lower in cost.

Description

technical field [0001] The invention relates to a device for regulating the temperature of devices in a plasma etching chamber and a temperature regulating method thereof. Background technique [0002] Such as figure 1 As shown, it is a schematic diagram of a partial cross-sectional structure of the plasma processor 10. The dotted line OO' in the figure is the axis of the entire plasma etching equipment 10, and the devices in the plasma processor 10 are mostly cylinders or rings. figure 1 Only partial cross-sections of these plasma-etched chamber devices are shown. In the plasma etching chamber 100 (such as figure 1 As shown), the lower electrode 109 is provided with an electrostatic chuck 102 , and the substrate 101 to be etched is arranged on the electrostatic chuck 102 . The lower electrode 109 is fed with high-frequency radio frequency (RF) power, which can be capacitively coupled with the upper electrode (not shown in the figure), and an alternating electric field is...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, there are also different defects in several cooling methods that are more conventionally used at present: 1. Bond the heating device, or glue it with epoxy resin, or use a heat-conducting tape to bond it to the low-temperature device 109, so as to achieve the effect of heat conduction cooling ,for example figure 1 In the process, the insulating ring 108 is pressed tightly by the clamp 105, so that the insulating ring 108 is in close contact with the lower electrode 109 and the plasma etching chamber 100, so that the heat of the focusing ring 103 is transferred to the lower electrode 109 with a lower temperature through the insulating ring 108 , to achieve the purpose of cooling the focus ring 103, but it is usually difficult to obtain sufficient heat conduction cooling effect in this way; 2. Set a sealed heat conduction chamber to realize heat conduction, such as figure 1 As shown, a sealed heat conduction cavity 104 is set between the focus ring 103 and the insulating ring 108, and the gas supply unit 107 supplies inert gas (such as helium) to the seal heat conduction cavity 104 through the gas channel 106, and conducts the temperature of the focus ring 103 to the temperature Lower insulating ring 108, but this method requires a good sealing environment, it is necessary to apply additional clamping force to compress the focus ring 103 and insulating ring 108, and the sealing ring set in order to obtain sealing performance will occupy a part Focusing on the contact surface between the ring 103 and the insulating ring 108, thereby reducing the heat conduction performance, and during the etching process, a large amount of etching gas in the reaction chamber will corrode the sealing ring, once the sealing ring is damaged, it will cause heat conduction. Leakage into the reaction chamber affects the distribution of the reaction gas, and the temperature control function of the focusing ring will also fail

Images