Quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and preparation method thereof

A nano-diamond, single-particle technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problem of not paying attention to the photoluminescence performance of diamond film, and achieve the effect of easy operation

Active Publication Date: 2017-04-19
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The diamond films involved in these reports are dense and continuous films grown on quartz substrates, and no nano-diamond films composed of single particles are involved; and in terms of performance, existing reports focus

Method used

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  • Quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and preparation method thereof
  • Quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and preparation method thereof
  • Quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] (1) Disperse 0.2g of nano-diamond powder in 20ml of deionized water to obtain a nano-diamond solution, place the quartz substrate in the obtained nano-diamond solution, and use an ultrasonic oscillator with a power of 200W to perform ultrasonic oscillation for 3 hours, and then place the quartz substrate The bottom was placed in deionized water and acetone in turn, and ultrasonically cleaned for 2 minutes using an ultrasonic oscillator with a power of 200W, and finally dried and set aside.

[0038] (2) Put the quartz substrate pretreated in step (1) into a hot-wire chemical vapor deposition equipment (purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001), using acetone as the carbon source, using a hydrogen drum The acetone is brought into the reaction chamber by bubble method, wherein the flow ratio of hydrogen and acetone is 200:90, the distance between the hot wire and the quartz substrate is 7mm, the reaction power is 1700W, and the working p...

Embodiment 2

[0043] (1) Disperse 0.2g of nano-diamond powder in 20ml of deionized water to obtain a nano-diamond solution, place the quartz substrate in the obtained nano-diamond solution, and use an ultrasonic oscillator with a power of 200W to perform ultrasonic oscillation for 3h, and then place the quartz The substrate was placed in deionized water and acetone in turn, and ultrasonically cleaned for 2 minutes using an ultrasonic oscillator with a power of 200W, and finally dried and set aside.

[0044] (2) Put the quartz substrate pretreated in step (1) into a hot-wire chemical vapor deposition equipment (purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001), using acetone as the carbon source, using a hydrogen drum The acetone is brought into the reaction chamber by bubble method, wherein: the flow ratio of hydrogen and acetone is 200:90, the distance between the hot wire and the quartz substrate is 7mm, the reaction power is 1700W, and the working pressure is ...

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Abstract

The invention provides a quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film. A preparation method of the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film includes the steps that a nano-diamond solution is used for performing sonic oscillation pretreatment on a quartz substrate; a hot filament chemical vapor deposition method is adopted, and preparation is conducted on the pretreated quartz substrate so that a nano-diamond thin film can be obtained; and then the nano-diamond thin film is placed into the air of 500-650 DEG C for heat preservation of 10-50min, and accordingly the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film is obtained. The preparation method is simple and easy to implement and operate. Binding force of the prepared high Si-V light-emitting single-particle-layer nano-diamond thin film and the quartz substrate is weak, a good foundation is laid for obtaining Si-V light-emitting nano-diamond crystalline grains by means of stripping, and therefore the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and the preparation method thereof are of great important scientific significance and engineering value to application of nano-diamond in the fields of biomarkers, single-photon sources and the like.

Description

[0001] (1) Technical field [0002] The invention relates to a single particle layer nano-diamond film grown on a quartz substrate with strong Si-V luminescence (the luminescence peak in the photoluminescence spectrum is at 738nm) and a preparation method thereof. [0003] (2) Background technology [0004] The luminescence peak of silicon-vacancy (Si-V) in diamond is located at 738nm in the photoluminescence spectrum, the luminescence peak is narrow (only 5nm), and the luminescence lifetime is short (only 1.2ns). These excellent optical properties make Si-V a A single photon source with great application potential has extremely important application prospects in the fields of quantum information technology, semiconductor devices, and optoelectronic devices. At the same time, the luminescence peak of the Si-V luminescence center is located at 738nm, and infrared light or near-infrared light can be used as excitation light, which can minimize the absorption of excitation light b...

Claims

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Application Information

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IPC IPC(8): C23C16/27
CPCC23C16/27
Inventor 胡晓君仰宗春
Owner ZHEJIANG UNIV OF TECH
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