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Nano-diamond thin film with Si-V light emission performance and controllable preparation method thereof

A nano-diamond and polycrystalline diamond technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of not having Si-V luminescence performance and difficulty in controlling the Si-V luminescence performance of thin films.

Active Publication Date: 2015-12-16
ZHEJIANG UNIV OF TECH
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Problems solved by technology

The Si-V luminescent center in the nanodiamond film prepared by chemical vapor deposition (CVD) is usually formed by the silicon in the substrate or quartz tube entering the film in the form of non-intentional doping during the film growth process, making the preparation Some of the films have Si-V luminescence, while some films do not have Si-V luminescence properties, that is, the Si-V luminescence properties of the films are difficult to control

Method used

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  • Nano-diamond thin film with Si-V light emission performance and controllable preparation method thereof
  • Nano-diamond thin film with Si-V light emission performance and controllable preparation method thereof
  • Nano-diamond thin film with Si-V light emission performance and controllable preparation method thereof

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Embodiment 1

[0023] Polish the polycrystalline diamond substrate with nano-sized diamond powder for about 15 minutes. The polished polycrystalline diamond substrate was ultrasonically oscillated in a diamond micropowder-acetone suspension for 2 hours, then ultrasonically cleaned with deionized water and acetone, and dried, and then used as a substrate for growing a nano-diamond film. The hot wire chemical vapor deposition method (chemical vapor deposition equipment purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHFCVD001) was adopted, with acetone as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The temperature is controlled at 600-700° C., the preparation time is 4 hours, and a nano-diamond film with a thickness of 4-6 μm is prepared. Using a 100keV isotope separator, the injection energy is 80keV, and the nano-diamond film is subjected to 10 14 cm -2 silicon ion implantation treatment to obtain silicon ion implanted nano-d...

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Abstract

The invention discloses a preparation method of a nano-diamond thin film with the Si-V light emission performance. The preparation method comprises the steps of preparing the nano-diamond thin film on a polycrystalline diamond substrate through the hot filament chemical vapor deposition method; injecting silicon ions into the nano-diamond thin film to obtain the thin film with the silicon ions injected, wherein the injection amount ranges from 10<13> cm<-2> to 10<15> cm<-2>; annealing the thin film with the silicon ions injected at the temperature of 800-900 DEG C and under the pressure of 3000-5000 Pa for 30-60 minutes to obtain an annealed thin film; preserving the temperature of the annealed thin film in the air at the temperature of 500-600 DEG C for 30-60 minutes to obtain the nano-diamond thin film with the Si-V light emission performance. According to the preparation method, quantitative silicon is doped into the nano-diamond thin film through the ion injection method, the doping amount of the silicon can be quantitative, controllable preparation of the nano-diamond thin film with the Si-V light emission performance can be achieved, and the prepared nano-diamond thin film has the Si-V light emission performance.

Description

(1) Technical field [0001] The invention relates to a nano-diamond thin film with Si-V luminescence (the luminescence peak in the photoluminescence spectrum is at 738nm) and a controllable preparation method thereof. (2) Background technology [0002] There are more than 500 luminescent centers in diamond, among which there are three most typical luminescent centers: nitrogen-vacancy (N-V), NE8 and silicon-vacancy (Si-V) centers, which have been confirmed as bright and stable room temperature single photon sources , has very important scientific significance and engineering value in the application of single photon sources, quantum information processing, optoelectronic devices, biomarkers, semiconductor devices and field emission displays. [0003] The luminescence peak of the Si-V luminescence center in diamond is located at 738nm in the photoluminescence spectrum (PL spectrum), the line width is narrow (~5nm), and the luminescence lifetime is very short (1.2ns), making Si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/56
Inventor 胡晓君徐辉
Owner ZHEJIANG UNIV OF TECH
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