Formation method of fin field effect transistor

Abstract

Provided is a fin-type field-effect tube formation method, which comprises the following steps: providing a substrate, wherein a plurality of separated fins are formed on the surface of the substrate; forming an initial hard mask on the top and side surfaces of the fins and the surface of the substrate; patterning the initial hard mask to form a hard mask layer, wherein the hard mask layer exposes a part of the top and side surfaces of the fins; with the hard mask layer being as a mask, carrying out ion implantation on the exposed fins; and removing the hard mask layer. The method improves the problem of shadow effect in the ion implantation technology, and thus electrical performance of a formed fin-type field-effect tube is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so that the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the pheno...

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Problems solved by technology

[0005] However, the electrical performance of the fin field effect transistor formed by the prior art needs to be improved

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