Static random access memory unit, static random access memory and electronic device

Abstract

The invention provides a static random access memory (SRAM) unit, a SRAM and an electronic device, and relates to the technical field of semiconductors. The SRAM unit comprises cross-coupled first phase inverter and second phase inverter, and a read transmission transistor, wherein the first phase inverter comprises a first pull-up transistor and a first pull-down transistor, the second phase inverter comprises a second pull-up transistor and a second pull-down transistor, the first phase inverter has a first storage node, and the second phase inverter has a second storage node; the read transmission transistor is connected between a read line and low level; a grid of the read transmission transistor is connected with the first storage node or the second storage node through a third phase inverter, and the third phase inverter comprises a read pull-up transistor and a read pull-down transistor. Compared with the SRAM unit, an 8T SRAM unit can remarkably increase read current on the premise of relatively smaller static total leaked current increasing. The SRAM and the electronic device have the SRAM unit provided by the invention, thereby having similar advantages.

Description

technical field [0001] The invention relates to a static random access memory, in particular to a dual-port static random access memory unit with read-write separation, a static random access memory and an electronic device. Background technique [0002] Semiconductor memory devices include static random access memory (ie, SRAM) and dynamic random access memory (ie, DRAM). Among them, the SRAM cell is bistable, which means that as long as it is provided with enough power, it can always maintain its own state. SRAM can work in a state of higher speed and lower power consumption, so all high-speed cache memories (cache) of computers use SRAM. Other applications of SRAM include embedded memory and network device memory. [0003] SRAM has been widely used in integrated circuits requiring high speed, low power consumption, etc. For various application requirements, people have developed SRAMs of various structures, such as conventional 6T SRAM (that is, a SRAM storage unit incl...

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Problems solved by technology

[0006] Although the above-mentioned 8T SRAM overcomes the above-mentioned problems, because the read current path includes two devices in series (RPG and RPD), the read current is small and cannot meet the demand. In order to increase the read current, the read pass transistor RPG and the read pull-down NMOS Tube RPD is designed as a double-fins device, which undoubtedly increases the difficulty and complexity of the process and the cost

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