Semiconductor device voltage-withstanding structure

Abstract

The invention relates to a semiconductor device voltage-withstanding structure. The semiconductor device voltage-withstanding structure comprises a high-voltage interconnection area used for arranging a high-voltage interconnection line, and a metal layer, a dielectric layer, a field oxide layer and an area, apart from an active region, of a drift area are successively arranged below the high-voltage interconnection area. The semiconductor device voltage-withstanding structure further comprises a plurality of conductor field plates and a plurality of semi-insulating resistor filed plates, wherein the conductor field plates are disposed above the semi-insulating resistor filed plates, and the conductor field plates are disposed in the dielectric layer, all the semi-insulating resistor filed plates are adjacent to the field oxide layer, the conductor field plates and the semi-insulating resistor filed plates form a plurality of capacitors, and any one capacitor at least can transmit energy to another capacitor. The semiconductor device voltage-withstanding structure generally reduces high voltages borne by the surface of the drift area, improves breakdown voltages of a semiconductor device and enables the semiconductor device to work under higher voltages.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a voltage-resistant structure of a semiconductor device. Background technique [0002] In a semiconductor device, if it needs to work at a higher voltage, it is necessary to connect a part of the electrodes to the peripheral high-voltage busbar through a high-voltage interconnection line. If the high-voltage interconnection line contains an active area under the area covered by the surface of the semiconductor device, when the high-voltage interconnection line is connected to the high-voltage bus bar, the high voltage will be transmitted to the active area through the contact hole through the dielectric layer and the field oxide layer, which may This leads to breakdown in the active region and ultimately makes the entire semiconductor device ineffective. Therefore, for a semiconductor device that needs to work at a higher voltage, an area dedicated to arranging the...

AI Technical Summary

Problems solved by technology

In the traditional method, the breakdown voltage of the entire semiconductor device withstand voltage structure 100 is increased by increasing the thickness of the dielectric layer 107 and the field oxide layer 106. However, this method has limitations in the application of high voltage and ultra-high voltage, generally only Applied to semiconductor devices with working voltage lower than 300V

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