An E-beam Evaporation Source with Controllable Evaporation Rate

Abstract

An electron beam evaporation source in an ultrahigh vacuum system comprises a bar-shaped metal source material, namely a metal source bar, a positive high voltage power source, a combined body of a shield plate (8) and a growth rate meter (9), an ion collection piece (7), a lamp filament (5), a positioning hole column (4), a cooling water cover (6) on the periphery of the metal source bar (3), a metal column (1) of a lamp filament support and a linear driver (2). The positive high voltage power source applies positive high voltage to the metal source bar, the cathode filament emits thermal electrons, the metal source bar emits a metal source atomic beam used as an evaporation source after being heated by the thermal electrons in a bombardment mode to reach the high enough temperature, the evaporation source is provided with the shield plate (8) and shields the evaporation beam after evaporation is stopped, the shield plate is provided with a concentric hole which allows the evaporation beam to pass therein when the shield plate is opened for film growth, the positioning hole column is used for activating and limiting procession of the source bar in the axial direction, the source bar is always in the vertical center of the evaporation source during position adjustment, and the emitting path of the evaporation source is provided with an ion collection piece.

Description

technical field [0001] The invention mainly relates to a growth source for material preparation in an ultra-high vacuum system, especially for the growth of high-quality metal single crystal thin films. Background technique [0002] High-quality metal thin-film materials are widely used in magnetic recording media, spin devices, and semiconductor devices, so this invention is of particular significance for research environments that focus on high-precision control and reproducibility of thin-film structures. [0003] When it is necessary to prepare high-quality thin films, we use an electron beam evaporation source connected to an ultra-high vacuum system to grow metal thin films. The metal source material is usually made into a rod shape, and a positive high voltage is added to it to attract electricity from the filament (I f ) thermal electrons generated by heating, and the thermal electrons bombard the metal rod to form an emission current (I e ), the electrons transfer...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that there is a physical limit in the increase of voltage / current, the purpose of the present invention is to propose an automatic electron beam evaporation source and control method, without changing the value of voltage / current, and using the evaporation beam current and emission current as feedback, By changing the position of the source rod, the growth rate of the film can be precisely controlled without frequent replenishment of the metal source material

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