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Single cell layer tungsten diselenide thin film and its growth method

A growth method, the technology of tungsten diselenide, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems that thin films cannot be obtained and cannot be avoided, and achieve high quality, few defects, and stable phase structure single effect

Active Publication Date: 2021-06-08
NANJING UNIV
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  • Description
  • Claims
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Problems solved by technology

[0004] The previous research work of our research group【Growth and Thermo-driven Crystalline PhaseTransition of Metastable Monolayer 1T’-WSe 2 Thin Film, published in Scientific Reports volume 9, Article number: 2685 (2019)] discloses a method for growing single cell layer tungsten diselenide by means of molecular beam epitaxy in an ultra-high vacuum chamber environment: During beam epitaxy growth of single cell layer tungsten diselenide, by precisely controlling the substrate temperature and growth time, the single cell layer tungsten diselenide single crystal domain with 1T' metastable structure phase can be effectively grown, but the method cannot avoid the stable phase 2H-WSe during growth 2 The formation of the single cell layer 1T’-WSe was finally obtained 2 and 2H-WSe 2 mixed phase film
This control technology provides a new method for the growth and preparation of metastable two-dimensional topological insulators, but it is still impossible to obtain 1T’-WSe with a unit cell layer with a single structural phase. 2 film

Method used

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  • Single cell layer tungsten diselenide thin film and its growth method
  • Single cell layer tungsten diselenide thin film and its growth method
  • Single cell layer tungsten diselenide thin film and its growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] In this example, a single cell layer 1T'-WSe with 100% single structural phase was grown by molecular beam epitaxy 2 .

[0055] Such as figure 1 , first construct a single WSe under ultra-high vacuum 2 Epitaxial film growth system; including infrared optical thermometer, tungsten electron beam evaporation source, selenium thermal evaporation source, and programmable current source. The sample and evaporation source are located in the ultra-high vacuum chamber, and the programmed current source is used for PID temperature automation of the sample control.

[0056] The actual temperature of the sample surface is measured by an infrared optical thermometer combined with a programmable power supply to realize automatic temperature control (patent number ZL201820763323.X). The optical thermometer is the PhotriX infrared thermometer from LumaSense. The program-controlled current source is Puyuan Precision Electronics DP811A program-controlled current source.

[0057] The ...

Embodiment 2

[0066] The difference from Example 1 is that a single cell layer 2H-WSe with 100% single structural phase is grown by molecular beam epitaxy 2 .

[0067] Such as figure 1 , first construct a single WSe under ultra-high vacuum 2 Epitaxial film growth system; including infrared optical thermometer, tungsten electron beam evaporation source, selenium thermal evaporation source, and programmable current source. The sample and evaporation source are located in the ultra-high vacuum chamber, and the programmed current source is used for PID temperature automation of the sample control. The specific structure of the preparation device is the same as that in Example 1, only the experimental conditions are different.

[0068] SrTiO 3 (100) The processing steps of the wafer substrate are the same as in Embodiment 1.

[0069] Raise the temperature of the selenium evaporation source to 140°C at a rate of 10°C per minute, adjust the accelerating voltage of the tungsten electron beam e...

Embodiment 3

[0075] The difference from Examples 1 and 2 is that 1T’-WSe was grown by molecular beam epitaxy 2 and 2H-WSe 2 mixed phase. The specific structure of the preparation equipment in this example is the same as that in Example 1, only the experimental conditions are different.

[0076] SrTiO 3 (100) The processing steps of the wafer substrate are the same as in Embodiment 1. Raise the temperature of the selenium evaporation source to 140°C at a rate of 10°C per minute, adjust the accelerating voltage of the tungsten electron beam evaporation source to 2000V, set the current of the thermionic wire to 5.5A, and set the heating power to about 70 watts, so that the tungsten atoms The beam current was stabilized at 50nA. At this time, the ratio of the tungsten source beam to the selenium beam is about 1:20, so the growth rate in the selenium-rich atmosphere is completely controlled by the tungsten atom beam, and the controlled growth rate is about 30 minutes per single cell layer. ...

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Abstract

The invention discloses a method for growing a single cell layer tungsten diselenide thin film by means of molecular beam epitaxy technology in an ultra-high vacuum chamber environment and realizing the selective control growth of two structural phases of 1T' and 2H. Specifically: select an appropriate substrate, during the growth of tungsten diselenide by molecular beam epitaxy, by precisely controlling the substrate temperature and growth time, it is possible to effectively control the growth of 100% single-structure phase 1T’-WSe 2 and 100% single structural phase of 2H‑WSe 2 film. This controlled approach provides a new technique for phase-selective growth of 2D materials with a single structural phase.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional material preparation, and more specifically relates to a phase selection control for realizing metastable 1T' structural phase and stable 2H structural phase during the growth process of single cell layer tungsten diselenide growing method. Background technique [0002] Since the preparation of graphene was realized experimentally, the research of two-dimensional materials has received extremely extensive attention. Graphene exhibits unique properties in many aspects such as electronic structure, mechanical strength, and stability. In terms of electron transport, although graphene has a very large carrier mobility, it is a semiconductor with zero energy gap, which is subject to many restrictions in the traditional semiconductor application field; on the other hand, in the original quantum spin Hall Effect (also known as two-dimensional topological insulator) theoretical research, quantum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/30C23C14/58C30B29/46C30B29/64C30B23/02
CPCC23C14/0623C23C14/30C23C14/5806C30B23/025C30B29/46C30B29/64
Inventor 张翼陈望
Owner NANJING UNIV
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