Production method of thin film transistor, thin film transistor and display device
A technology of thin-film transistors and carbon films, which is applied in the preparation of thin-film transistors, thin-film transistors and display devices, can solve the problem that the protection effect of the active layer protective film is not very satisfactory, and achieve the effect of improving process stability and avoiding damage
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Embodiment 1
[0045] refer to figure 1 , shows a flow chart of steps of a method for manufacturing a thin film transistor according to Embodiment 1 of the present invention.
[0046] The thin film transistor manufacturing method of the embodiment of the present invention includes the following steps:
[0047] Step 101: sequentially forming a gate electrode, an electrode insulating layer, and an active layer on the base substrate through a patterning process.
[0048] Step 102: forming a carbon film layer covering the active layer and the electrode insulating layer.
[0049] Step 103: forming a metal film layer, the metal film layer covering the carbon film layer.
[0050] Step 104: Forming source electrodes and drain electrodes through a patterning process.
[0051] In the embodiment of the present invention, by covering the active layer of the TFT with a conductive carbon film layer, the conduction between the active layer and the source electrode and the drain electrode is realized, an...
Embodiment 2
[0053] refer to figure 2 , shows a flow chart of steps of a method for manufacturing a thin film transistor according to Embodiment 2 of the present invention.
[0054] The thin film transistor manufacturing method of the embodiment of the present invention includes the following steps:
[0055] Step 201: sequentially forming a gate electrode, an electrode insulating layer, and an active layer on a base substrate through a patterning process.
[0056] In practice, TFT-LCD thin film transistors are formed on the base substrate of the liquid crystal display, usually the base substrate is a flat glass substrate.
[0057] In the embodiment of the present invention, the gate electrode 2 , the electrode insulating layer 4 , and the active layer 5 can be sequentially formed on the base substrate 1 through a patterning process.
[0058] Specifically, the gate electrode 2 can be a metal electrode with good conductivity such as metal Al, Mo, AlNd alloy, Cu, MoNd alloy, etc., and its ...
Embodiment 3
[0150] The embodiment of the present invention also discloses a thin film transistor, including: a gate electrode, an electrode insulating layer, an active layer, a source electrode and a drain electrode, and the thin film transistor also includes a gate electrode, an electrode insulating layer, a drain electrode, The carbon film layer between the poles.
[0151] In a preferred embodiment of the embodiment of the present invention, the thin film transistor further includes a carbon film touch electrode fabricated on the electrode insulating layer in the same patterning process as the carbon film layer.
[0152] In a preferred embodiment of the embodiment of the present invention, the material of the active layer is InGaZnO.
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Abstract
Description
Claims
Application Information
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