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Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof

A crystalline silicon battery, light-induced attenuation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of reducing the life of the minority carrier and the loss of battery efficiency, and improve competitiveness, reduce light-induced attenuation, and improve cooling. effect of speed

Inactive Publication Date: 2017-05-24
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Application Information

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Problems solved by technology

However, since the cells need to go through a temperature decreasing region of 70°C-230°C when they pass through the cooling zone, the cells still receive certain light intensity irradiation in this temperature zone. At this time, the separated boron and oxygen atoms will Boron-oxygen (B-O) complexes are produced again under the same conditions to form a carrier recombination center, which reduces the minority carrier life of the cell, resulting in a loss of cell efficiency
A large number of production data show that after the P-type (boron-doped) crystalline silicon cell passes through the LID annealing furnace, the cell efficiency loss is in the range of 0.05%-0.15%

Method used

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  • Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof

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Embodiment Construction

[0031] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but not to be construed as a limitation of the present invention.

[0032] A method for eliminating light-induced attenuation of boron-doped crystalline silicon cells, comprising the following steps:

[0033] Step 1: Use the conveyor belt to transport the cells through the rapid heating zone, use resistance wires and high-power lamps for heating treatment, and use halogen lamps, lasers or LED lamps for high-light treatment. The light intensity ranges from 0 to 9×10 6 w / m 2 , the temperature range is 100°C to 500°C, the duration is T1, T1 is 1s to 100s, the...

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Abstract

The invention provides a method for eliminating light induced degradation of a boron-doped crystalline silicon cell. Reduction of the cell efficiency caused by the cell boron-oxygen compound process can be eliminated through fast heating and high illumination processing, constant temperature heating and high illumination processing and fast cooling and keeping out of the sun and cooling processing so that the efficiency and the reliability of the cell can be enhanced and the production cost of the cell can be saved. Correspondingly, the invention also provides a device for eliminating light induced degradation of the boron-doped crystalline silicon cell. The structure is simple and operation is convenient.

Description

technical field [0001] The invention belongs to the technical field of silicon batteries, in particular to a method and a device for eliminating light-induced attenuation of boron-doped crystal silicon batteries. Background technique [0002] The problem of Light Induced Degradation (LID) of boron-doped crystalline silicon solar cells has always been a concern in the industry. With the continuous improvement of the conversion efficiency of P-type (boron-doped) crystalline silicon solar cells, the The problem of efficiency loss is also becoming more and more prominent. It is generally believed that the main reason for the light-induced attenuation of P-type solar cells is that in the case of the simultaneous presence of boron and oxygen in silicon materials, light or current injection causes boron and oxygen to form boron-oxygen (B-O) complexes. The boron-oxygen complex is a metastable defect that forms a recombination center that reduces the minority carrier lifetime. [0...

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 彭彪俞超李慧吴俊清樊华徐建徐华浦张银
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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