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A Method for Fabricating Laterally Circular Micro-Coaxial Metal Structures on Silicon Substrates

A metal structure and silicon substrate technology, applied in the manufacture of microstructure devices, microstructure technology, microstructure devices, etc., to achieve the effect of simple preparation steps, excellent effect, and small processing size

Inactive Publication Date: 2018-03-09
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for preparing a horizontal circular micro-coaxial metal structure on a silicon substrate, which can solve the problem that the current horizontal circular micro-coaxial structure cannot be directly prepared

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  • A Method for Fabricating Laterally Circular Micro-Coaxial Metal Structures on Silicon Substrates
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  • A Method for Fabricating Laterally Circular Micro-Coaxial Metal Structures on Silicon Substrates

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] The object of the present invention is to provide a method for preparing a lateral circular micro-coaxial metal structure on a silicon substrate.

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] As shown in the figure, a method for preparing a la...

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Abstract

The invention discloses a method for preparing a horizontal circular metal micro coaxial structure on a silicon substrate. The method comprises the following steps: firstly coating PDMS on the silicon substrate to serve as a release layer, and growing a metal seed layer on the release layer; separately preparing an SU-8 film to serve as a supporting body of an inner conductor and preparing a KMPR photoresist film to serve as a film structure of an inner and outer metal conductor structure; performing micro-electroforming and removing the KMPR film structure to obtain a longitudinal metal micro coaxial structure; separating the longitudinal metal micro coaxial structure from the silicon substrate; and finally horizontally bonding the longitudinal metal micro coaxial structure on the silicon substrate to obtain a longitudinal circular metal micro coaxial structure. According to the method disclosed by the invention, the horizontal circular metal micro coaxial structure is obtained by using the release layer, the UV-LIGA photoetching, bonding and other techniques, and the problem that a horizontal cylindrical structure in the existing micron coaxial structure is hard to prepare is solved.

Description

technical field [0001] The invention relates to the technical field of metal microstructure manufacturing, in particular to a method for preparing a lateral circular micro-coaxial metal structure on a silicon substrate based on technologies such as release layer, UV-LIGA process, micro-electroforming and bonding. Background technique [0002] In RF MEMS (Radio Frequency Micro-Electro-Mechanical Systems), in order to meet the technical requirements of function, assembly, integration, etc., many components need to have three-dimensional microstructures such as inclined planes and free-form surfaces, especially micro-coaxial structures. attracted the attention of most researchers. [0003] Most of the existing three-dimensional micro-coaxial structures are rectangular coaxial microstructures prepared by the multi-step LIGA process (that is, the inner shaft and outer shell of the conductor are both rectangular structures). The reason why the rectangular micro-coaxial metal struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/02C25D1/00
CPCB81B7/02B81B2201/00B81C1/00015B81C1/00476B81C1/00555B81C2203/0785C25D1/00
Inventor 阮久福张称董耘琪宋哲赵欣悦黄波
Owner HEFEI UNIV OF TECH
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