Manufacturing method for shallow trench isolation floating gate structure and manufacturing method for floating gate type flash memory

Abstract

The invention provides a manufacturing method for a shallow trench isolation floating gate structure and a manufacturing method for a floating gate type flash memory. The manufacturing method for the shallow trench isolation floating gate structure comprises the steps of providing a semiconductor substrate; forming an electronic channel layer and an electronic storage layer on the semiconductor substrate in sequence; forming a patterned photoresist layer on the electronic storage layer; taking the patterned photoresist layer as a mask, etching the electronic storage layer, the electronic channel layer and a part of the semiconductor substrate to form a plurality of trenches, and then removing the patterned photoresist layer; filling the trenches with an insulating material, wherein the insulating material covers the electronic storage layer; and adopting a chemical grinding process to remove the insulating material on the electronic storage layer to form the shallow trench isolation floating gate structure. The process is simple and the cost is relatively low; and meanwhile, the problem of pits generated in the surface of the electronic storage layer in the grinding process can be avoided, and the yield of a semiconductor device can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a manufacturing method of a shallow trench isolation (shallow trench isolation) floating gate (Floating Gate) structure and a manufacturing method of a floating gate flash memory. Background technique [0002] Since the shallow trench isolation floating gate structure can increase the contact area between the floating gate and the oxide-nitride-oxide (Oxide-Nitride-Oxide) structure in the subsequent process, and improve the coupling rate of the device, it is used in the floating gate flash memory Shallow trench isolation floating gate structures are often used in the fabrication of chips. [0003] The fabrication method of traditional shallow trench isolation floating gate structure comprises the following steps: [0004] Such as figure 1 As shown, a semiconductor substrate 101 is provided; [0005] Such as figure 2 As shown, an electron channel laye...

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Problems solved by technology

[0014] The purpose of the present invention is to solve the problem that the traditional manufacturing method of shallow trench isolation floating gate structure is complicated

[0015] Another object of the present invention is to solve the problems of the electron storage layer surface depression and polysilicon residues

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