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Manufacturing method and layout structure of back-illuminated sensor

A technology of layout structure and manufacturing method, which is applied in the direction of semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of affecting the light transmittance of the pixel area, affecting the performance of the back-illuminated sensor chip, and uneven imaging, so as to avoid Light transmittance, avoidance of metal residual defects, and performance-enhancing effects

Active Publication Date: 2019-01-18
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

[0003] In the three-dimensional stacked back-illuminated sensor (UTS), a metal grid is set, and the light-transmitting properties of the metal grid (metal grid) are used to prevent the crosstalk of light between different pixels (photodiodes), but this metal There have always been some problems in the grid layer process, among which the residual defects etched in the metal grid layer will affect the light transmittance of the pixel area, making the imaging uneven, thereby affecting the performance of the back-illuminated sensor chip, which is understood by those skilled in the art don't want to see

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  • Manufacturing method and layout structure of back-illuminated sensor
  • Manufacturing method and layout structure of back-illuminated sensor
  • Manufacturing method and layout structure of back-illuminated sensor

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[0034] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the following description, many specific details are explained in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the connotation of the present invention. Similar promotion, therefore, the present invention is not limited by the specific embodiments disclosed below. Secondly, the present invention will be described in detail in conjunction with schematic diagrams. In detailing the embodiments of the present invention, for ease of description, the cross-sectional view showing the device structure will not be partially enlarged according to the general scal...

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Abstract

The present invention provides a manufacturing method and a layout structure of a back-illuminated sensor. In the layout structure, the range of the metal grid layer at least covers the boundary of the pixel layer of the protective layer close to the pixel area, so that in the manufacturing method, according to When the new layout structure manufactures the metal grid of the back-illuminated sensor, the metal at the step between the protective layer and the pixel layer does not need to be etched away, thereby avoiding metal residual defects and affecting the light transmittance of the pixel area, thereby improving the final Performance of the fabricated back-illuminated image sensor chips.

Description

Technical field [0001] The invention relates to the technical field of back-illuminated sensor manufacturing, in particular to a manufacturing method and layout structure of a back-illuminated sensor. Background technique [0002] The light of a back-illuminated (BSI) sensor enters the substrate from the back of the substrate instead of the front. Because of the reduced light reflection, the BSI sensor can capture more image signals than the front-illuminated sensor. At present, the three-dimensional stacked back-illuminated sensor (UTS) integrates the logic operation chip and the pixel (photodiode) array chip three-dimensionally through TSV (through Si Via). On the one hand, it increases the sensor array while maintaining the chip volume. The size and area, on the other hand, greatly shorten the metal interconnection between functional chips, reduce heat generation, power consumption, and delay, and improve chip performance. [0003] In the three-dimensional stacked back-illumina...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L27/02
CPCH01L27/0207H01L27/14601H01L27/14605H01L27/1464H01L27/14683
Inventor 占琼朱继锋
Owner WUHAN XINXIN SEMICON MFG CO LTD
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