Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for preparing nanoscale patterned sapphire substrate based on polymer microspheres

A patterned sapphire and polymer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of complex preparation process of nanoimprinting method, achieve the effects of avoiding non-planar warping, simple process, and improving crystal quality

Active Publication Date: 2019-03-01
EAST CHINA NORMAL UNIV +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At this stage, nanoimprint technology is generally used to realize patterned sapphire substrates of nanometer size, but nanoimprint technology is not yet mature, and the preparation process of nanoimprint method is relatively complicated, involving the preparation of imprint templates and embossing. Transfer of printed graphics, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing nanoscale patterned sapphire substrate based on polymer microspheres
  • A method for preparing nanoscale patterned sapphire substrate based on polymer microspheres
  • A method for preparing nanoscale patterned sapphire substrate based on polymer microspheres

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) if figure 1 As shown, a layer of highly dense silicon dioxide layer 12 is grown on a 4-inch flat sapphire substrate 11 by magnetron sputtering. The conditions of magnetron sputtering are: adopt sputtering growth in an argon (Ar) environment, the flow rate of Ar is 30sccm, the chamber pressure is controlled at 0.5Pa, the sputtering power is 80W, and the growth without heating is 140min. The silicon oxide layer 12 has a thickness of 300 nm.

[0047] 2) at figure 1 On the silicon dioxide layer 12 of the structure shown, a single-layer closely arranged polystyrene microsphere array 21 is formed by a spin-coating self-assembly method. The PSD-porous series polystyrene microspheres under the smartnano brand are used. The diameter of the microspheres is 3 microns. On the above-mentioned silicon dioxide layer, carry out spin-coating then, comprise two processes of low-speed spin-coating and high-speed spin-coating, the low-speed spin-coating speed is 500 revolutions / min, ...

Embodiment 2

[0055] Figure 6 For the electroluminescence (EL) figure of the GaN-based green light LED prepared under 20mA current for adopting ordinary sapphire substrate, micron-scale PSS and nano-scale PSS prepared by Example 1 of the present invention, it can be seen that the PSS substrate prepared LED luminous intensity is much higher than the sapphire substrate device of common structure, wherein the LED luminous intensity of micron-level PSS has improved 35% than common sapphire substrate LED luminous intensity, and adopts the LED of nano-level PSS prepared by the embodiment of the present invention 1 Compared with the LED luminous intensity of micron-level PSS, the luminous intensity is increased by 8%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method of preparing a nanoscale graphical sapphire substrate based on polymeric microspheres. The method includes the steps that a silicon dioxide layer grows on the sapphire substrate; a single-layer polymeric microsphere array arranged closely is formed on the silicon dioxide layer in a self-assembly mode; dry etching is carried out on the polymeric microspheres to reduce the diameter of the microspheres so as to form a polymeric microsphere array arranged in a non-close and regular mode; etching is carried out on the silicon dioxide layer with the polymeric microsphere array arranged in the non-close and regular mode as a mask to obtain silicon dioxide nano columns arranged regularly; the silicon dioxide nano columns are used as a mask for etching the sapphire substrate to obtain the nanoscale graphical sapphire substrate. The method is simple, easy to implement, high in repeatability, large in yield, low in production cost, suitable for preparing graphical sapphire substrates in various sizes and suitable for large-scale production in enterprises. The invention further discloses application of the nanoscale graphical sapphire substrate in a GaN-based LED.

Description

technical field [0001] The invention belongs to the technical field of GaN-based LED patterned substrates, and relates to a method for preparing nanoscale patterned sapphire substrates based on polymer microspheres, in particular to using polymer microspheres formed by self-assembly on the surface of a silicon dioxide layer to Regularly arranged silicon dioxide nanocolumns are prepared, and then a nanoscale patterned sapphire substrate is obtained by etching. Background technique [0002] Compared with traditional light sources, GaN-based LEDs have the advantages of small size, long life, high efficiency, energy saving and environmental protection, and have been widely used in displays, indicator lights, backlights, solid-state lighting, traffic lights, short-range optical communications, and biosensors. each field. Due to the lack of large-scale GaN substrates, GaN thin films are generally grown on sapphire, silicon carbide or silicon substrates by heteroepitaxy. Sapphire...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/007H01L33/22
Inventor 翁国恩陈少强胡小波涂亮亮魏明德
Owner EAST CHINA NORMAL UNIV