Nanoscale patterned sapphire substrate and preparation method and application thereof
A patterned sapphire and sapphire substrate technology, which is applied in the direction of nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex preparation process of nanoimprinting method, and achieve improved light extraction efficiency, low production cost, Avoid the effect of non-planar warping
Inactive Publication Date: 2017-01-04
EAST CHINA NORMAL UNIV +1
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Problems solved by technology
[0005] At this stage, nanoimprinting technology is generally used to realize patterned sapphire substrates of nanometer size, but nanoimprinting technology is not yet mature, and the preparation process of nanoimprinting method is relatively complicated, involving the preparation of imprinting templates and embossing patterns. transfer, etc.
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Embodiment 1
[0039] 1) if figure 1 As shown, a layer of highly dense silicon dioxide layer 12 is grown on a 4-inch flat sapphire substrate 11 by magnetron sputtering, and the thickness of the silicon dioxide layer 12 is 300 nanometers;
[0040] 2) at figure 1 On the silicon dioxide layer 12 of the structure shown, a solvent displacement self-assembly method is used to form a single layer of closely arranged polystyrene microsphere arrays 21, and the diameter of the microspheres is controlled at about 600 nanometers, such as figure 2 shown;
[0041] 3) On the substrate to which the polystyrene microsphere array 21 is attached, a layer of gold 31 is grown by evaporation. The thickness of the gold 31 is 300 nanometers. It is noted that the gaps between the microspheres will also evaporate gold at the same time. 31, such as image 3 shown;
[0042] 4) Put the above-mentioned gold-grown structure into a muffle furnace, anneal at a high temperature of 750° C. for 100 minutes, and then obtai...
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Abstract
The present invention discloses a nanoscale patterned sapphire substrate and a preparation method thereof. The method comprises: (1) growing a silicon dioxide layer on a sapphire substrate; (2) performing self-assembly on the silicon dioxide layer to form a single layer of polymeric microsphere array that is arranged closely; (3) growing a metal layer on a surface of the polymeric microsphere array; (4) performing annealing under high temperature of 750 DEG C and 1050 DEG C successively to obtain a metal nanosphere array that is not arranged closely; (5) using the metal nanosphere array as a mask to etch the silicon dioxide layer to obtain silicon dioxide nanorods that are arranged regularly; and (6) using the silicon dioxide nanorods as a mask to etch the sapphire substrate, and removing the silicon dioxide nanorods, so as to finally obtain the nanoscale patterned sapphire substrate (PSS). The method is simple in technology, good in stability, high in rate of finished products, and suitable for preparing patterned sapphire substrates of various wafer sizes; the obtained nanoscale patterned sapphire substrate has higher light extraction efficiency, and is of great significance to improving luminous efficiency of a GaN-based LED.
Description
technical field [0001] The invention belongs to the technical field of GaN-based LED patterned substrates, and relates to a method for preparing nanoscale patterned sapphire substrates based on self-assembled metal microspheres, in particular to polymer microspheres formed by self-assembly on the surface of a silicon dioxide layer To prepare a regularly arranged metal microsphere array, and then obtain a regularly arranged silicon dioxide nanocolumn by etching, and further etch to obtain a nanoscale patterned sapphire substrate. Background technique [0002] Compared with traditional light sources, GaN-based LEDs have the advantages of small size, long life, high efficiency, energy saving and environmental protection, and have been widely used in displays, indicator lights, backlights, solid-state lighting, traffic lights, short-range optical communications, and biosensors. each field. Due to the lack of large-scale GaN substrates, GaN thin films are generally grown on sapp...
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IPC IPC(8): H01L21/02B82Y40/00
CPCB82Y40/00H01L21/02
Inventor 翁国恩陈少强胡小波
Owner EAST CHINA NORMAL UNIV