A hybrid laser for polymer-assisted bonding and its preparation method

Abstract

The invention discloses a polymer auxiliary bonding mixed type laser and a preparation method thereof. The mixed type laser comprises a silicon-based waveguide microcavity structure with a transparent conductive medium ITO and a III-V group laser with a natural cleavage forming method Brie-Porro cavity, wherein the III-V group laser is positioned above the silicon-based waveguide microcavity structure; the silicon-based waveguide microcavity structure and the III-V group laser are bonded by a PVA auxiliary bonding material; an n-type substrate of the III-V group laser is in contact with an ITO transparent conductive layer on the silicon-based waveguide microcavity structure; and electrical pumping of the III-V group laser is realized by applying voltage to a metal electrode and the ITO. The preparation method comprises the following steps: preparing the silicon-based waveguide microcavity structure with the transparent conductive medium; manufacturing the III-V group laser and thinning the substrate of the III-V group laser; and softening a polymer on the silicon-based waveguide microcavity structure to improve the viscosity of the polymer, and placing the III-V group laser above the silicon-based waveguide microcavity structure with the transparent conductive medium to realize aligning bonding of the silicon-based waveguide microcavity structure and the III-V group laser.

Description

technical field [0001] The invention relates to the technical field of bonding of hybrid lasers, in particular to a hybrid laser of Group III-V lasers with a silicon-based waveguide microcavity structure in which polymers replace metals to assist bonding and a preparation method thereof. Background technique [0002] Silicon-based materials play an important role in modern semiconductor technology, and its technology is the most mature and widely used. However, the main element of silicon-based materials is silicon, which is an indirect bandgap material with low luminous efficiency and is not suitable as a laser light source. The III-V group semiconductor materials are direct bandgap materials. If the III-V group materials are grown directly on the silicon substrate, the growth is difficult due to lattice mismatch, which limits the development of III-V group lasers. Based on the respective advantages of the two materials, hybrid lasers have become a better solution. At pres...

AI Technical Summary

Problems solved by technology

However, the main element of silicon-based materials is silicon, which is an indirect bandgap material with low luminous efficiency and is not suitable as a laser light source.

The III-V group semiconductor materials are direct bandgap materials. If the III-V group materials are directly grown on the silicon substrate, the growth is difficult due to lattice mismatch, which limits the development of III-V group lasers.

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