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Ion beam transmission system

A transmission system and ion beam technology, applied in the directions of accelerators, electrical components, etc., can solve the problems of poor transmission capacity of high-current ion beams, inability to accelerate high-current ion beams, and few means to improve the quality of ion beams. The effect of improving energy

Active Publication Date: 2017-05-31
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] However, in the prior art, the existing ion beam low-energy transmission system usually only includes a solenoid lens and a vacuum chamber, and the solenoid lens only has the ability to focus the ion beam, which is a means for improving the quality of the ion beam less, and the ability to transmit high-current ion beams in the order of 1mA to 1A is poor, so that the high-current ion beam cannot smoothly enter the back-end acceleration system for acceleration

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Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0044] An embodiment of the present invention provides an ion beam transmission system, refer to figure 1 , figure 1A schematic structural diagram of an ion beam transmission system provided by an embodiment of the present invention, the transmission system includes: an ion source 11, a first combined solenoid 12, a first vacuum chamber 13, a four-quadrant beam probe 14, Bidirectional correction magnet 15 , second combination solenoid 16 and second vacuum cha...

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Abstract

The invention provides an ion beam transmission system. The transmission system comprises an ion source, a first vacuum chamber and a second vacuum chamber which are connected by a vacuum pipe sequentially, wherein a first combined solenoid is arranged between the ion source and the first vacuum chamber; four-quadrant beam limit probes are arranged on the first vacuum chamber; a bidirectional correction magnet is arranged between the first vacuum chamber and the second vacuum chamber; a second combined solenoid is arranged between the bidirectional correction magnet and the second vacuum chamber; the first combined solenoid and the second combined solenoid are used for focusing an ion beam and controlling the direction of the ion beam; the four-quadrant beam limit probes are used for controlling flow intensity, size and shape of the ion beam stream. The transmission system has a high transmission capacity for intense ion beam in a magnitude of 1mA-1A, can improve the quality of the ion beam, and can make the intense ion beam enter a back-end acceleration system to be accelerated.

Description

technical field [0001] The present invention relates to the technical field of nuclear energy, and more specifically, relates to an ion beam transmission system. Background technique [0002] With the continuous development of science and technology, doping is formed by implanting ions of boron, phosphorus or other elements with a certain energy into the semiconductor material, and the energy and current intensity of the ion beam are used to control the depth and concentration of the doping respectively, instead of The original diffusion process has become an important link in the production of semiconductor large-scale integrated circuits. [0003] Ion implantation has an important application in the modification of metal materials. By implanting certain elements at a specific concentration in metal materials, the hardness, corrosion resistance and fatigue resistance of the metal can be improved, and the wear rate of the metal can be reduced. Moreover, by using the interac...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H7/00
CPCH05H7/001
Inventor 吴宜灿王永峰王志刚刘超宋钢
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI