A programming method and device for a storage unit

Abstract

The embodiment of the invention discloses a programming method and device for a storage unit. The programming method comprises the steps that a first grid voltage is exerted on the storage unit needing to be programmed, so that an initial threshold voltage of the storage unit is controlled to be raised, and a first threshold voltage is obtained, wherein the first threshold voltage is smaller than a preset threshold voltage; and an ith grid voltage is exerted on the storage unit according to set rules, so that an (i-1)th threshold voltage is controlled to be raised till the preset threshold voltage is reached, wherein i is equal to 2, 3, 4, .... According to the programming method and device, the storage unit is programmed through multiple programming processes, and different grid voltages are exerted on the storage unit in different programming processes, so that the threshold voltage of the storage unit is raised step by step to reach the preset threshold voltage; the difference value between a gate source voltage and the threshold voltage is small in each programming process, and accordingly needed programming currents are low, so that low-power-consumption programming of a storage chip is realized.

Description

technical field [0001] Embodiments of the present invention relate to memory technologies, and in particular to a method and device for programming memory cells. Background technique [0002] As we all know, a non-volatile memory chip includes a plurality of memory cells, and the state of the memory cells includes a programmed state and an erased state, and programming a memory cell means programming the erased state of the memory cell to the programmed state, wherein, Changes in the state of a memory cell are related to its threshold voltage. [0003] The method of programming memory cells in the prior art is: apply a very high gate voltage on the memory cells, and program the memory cells in the erased state directly to the programmed state through one-time programming, that is, through a very high gate voltage Raising the low threshold voltage of the memory cell to a high threshold voltage. When the memory cell rises to a high threshold voltage, the memory cell is in a ...

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Problems solved by technology

[0004] In this programming process, since the threshold voltage (VTH) of the memory cell in the erased state is low, the gate voltage (VG) is very high, and the corresponding gate-source voltage (VGS) is very high, and the programming current is equal to (VGS-VTH ) is proportional, so the programming current required by the memory cell during the programming process is very large, resulting in a large overall programming power consumption of the memory chip

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