Preparation method of high-reliability vertical flip-chip LED chip

Abstract

The invention provides a fabrication method of a vertically inverted LED chip with high reliability. According to the fabrication method of the vertically inverted LED chip with high reliability, first insulation layers with good-quality film layers are formed at the bottom and side walls of a second deep hole and a passage after a first deep hole, the second deep hole and the passage are formed and are used for coating a luminous layer multi-quantum well which is etched and exposed, a residual patterned sapphire substrate imprint and abnormal metal reverse-spraying caused by subsequent etching of an n-type GaN layer are prevented, and the reliability of the inverted LED chip during the application process is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a high-reliability vertical flip-chip LED chip. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor solid-state light-emitting device, which is made by using the principle of semiconductor P-N junction electroluminescence. LED devices have good photoelectric properties such as low turn-on voltage, small size, fast response, good stability, long life, and no pollution. Therefore, they are widely used in outdoor and indoor lighting, backlighting, display, traffic indication and other fields. [0003] Vertical flip chip combines the structural advantages of both flip chip and vertical chip. In terms of performance, it not only ensures good current diffusion and uniform light distribution, but also ensures the advantages of axial light intensity and good heat dissipation. It is used for In s...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a high-reliability vertical flip-chip LED chip, which is used to solve the problem of PSS imprinting caused by the etching of the n-type GaN layer in the prior art. It is copied to the metal, which makes the appearance poor, and when the metal layer is etched, the metal will splash back to the etched side wall, which will cause abnormal leakage during subsequent use, resulting in abnormal reliability such as failure

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