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scan drive circuit

A scan drive circuit and scan drive technology, applied in digital memory information, instruments, static memory, etc., can solve the problems of scan drive circuit failure, threshold voltage Vth negative drift, low power consumption, etc., to prevent failure and leakage Effect

Active Publication Date: 2019-08-02
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Indium Gallium Zinc Oxide (IGZO) has high mobility and good device stability, which can reduce the complexity of the scan drive circuit. Due to the high mobility of IGZO, the size of the thin film transistor in the scan drive circuit is relatively small, which is beneficial to The production of narrow-frame displays; secondly, due to the device stability of IGZO, the number of power supply and thin-film transistors used to stabilize the performance of thin-film transistors can be reduced, so that the circuit is simple and the power consumption is low. However, due to the characteristics of the IGZO material itself, the initial threshold voltage Vth is easy to be negative, and the influence of light will cause serious negative drift of the threshold voltage Vth, which may cause the scanning drive circuit to fail

Method used

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Embodiment Construction

[0024] Please refer to figure 1 , is a schematic circuit diagram of the first embodiment of the scan driving circuit of the present invention. The scanning driving circuit includes several scanning driving units 1 connected in sequence, and each scanning driving unit 1 includes a scanning signal output terminal G(n), which is used to output a high-level scanning signal or a low-level scanning signal;

[0025] The pull-up circuit 10 is used to receive the clock signal CK(n) of the current stage and control the scanning signal output terminal G(n) to output a high-level scanning signal according to the clock signal CK(n) of the current stage;

[0026] The downlink circuit 20 is connected to the pull-up circuit 10, and is used to output a high-level level transmission signal ST(n);

[0027] The pull-up control circuit 30 is connected to the downlink circuit 20, and is used to charge the pull-up control signal point Q(n) to pull up the potential of the pull-up control signal poin...

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Abstract

The invention discloses a scanning driving circuit, which includes several scanning driving units connected in sequence, each scanning driving unit includes a scanning signal output terminal, which outputs a high or low level scanning signal; a pull-up circuit controls the output of a high level scanning signal. signal; the downlink circuit, which outputs a high-level level transmission signal; the pull-up control circuit, which charges the pull-up control signal point to pull the potential up to a high level; the pull-down maintenance circuit, maintains the pull-up control signal point and The low level of the scanning signal; the bootstrap circuit increases the potential of the pull-up control signal point to prevent leakage, thereby preventing the negative threshold voltage from causing the scanning drive circuit to fail.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a scanning driving circuit. Background technique [0002] The GOA (Gate Driver on Array) technology is beneficial to the narrow frame design and cost reduction of the display screen, and has been widely used and researched. Indium Gallium Zinc Oxide (IGZO) has high mobility and good device stability, which can reduce the complexity of the scan drive circuit. Due to the high mobility of IGZO, the size of the thin film transistor in the scan drive circuit is relatively small, which is beneficial to The production of narrow-frame displays; secondly, due to the device stability of IGZO, the number of power supply and thin-film transistors used to stabilize the performance of thin-film transistors can be reduced, so that the circuit is simple and the power consumption is low. However, due to the characteristics of the IGZO material itself, the initial threshold voltage Vth tends to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20
CPCG09G3/20G09G2300/0408G09G2310/0267G09G2310/0286G11C19/28G09G2310/0289G09G2310/067G09G2320/045
Inventor 石龙强
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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