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Power mosfets and methods for manufacturing the same

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc.

Inactive Publication Date: 2017-06-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantages of power MOSFETs are high on-resistance and coverage / overlay control issues

Method used

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  • Power mosfets and methods for manufacturing the same
  • Power mosfets and methods for manufacturing the same
  • Power mosfets and methods for manufacturing the same

Examples

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Embodiment Construction

[0014] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0015] It should be understood that when a component is referred to as being "on," "connected to" or "coupled to" another component or layer, it can be directly on the other component or layer, or connected or coupled to the other component or layer. components or layers, or there may be intermediate components or layers. In contrast, when a component is referred to as being "directly on," "directly connected to" or "directly coupled to" another component or layer, there are no intervening components or layers present.

[0016] It should be understood that although the terms first, second, third, etc. may be used here...

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PUM

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Abstract

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly, to semiconductor devices and manufacturing methods thereof. Background technique [0002] Since the advent of semiconductor devices based on bipolar technology, such as bipolar junction transistors (BJTs), a great deal of effort has been devoted to increasing the power handling capabilities of these devices in order to expand their applications. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are transistors used to amplify or switch electronic signals. A MOSFET is a four-terminal device with a source (S), gate (G), drain (D) and base (B). The MOSFET is by far the most common transistor found in digital and analog circuits, but the BJT was more common for a while. [0003] As CMOS technology gained importance, and process technology in the field of integrated circuits evolved beyond bipolar technology for power devices, power MOSFETs were intro...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L21/28H01L29/06
CPCH01L21/28008H01L29/66477H01L29/78H01L29/0653H01L29/42356H01L29/402H01L21/28061H01L29/42376H01L29/7835H01L29/0847H01L29/66659H01L27/0733H01L29/0865H01L29/0882H01L29/1095H01L29/42368H01L29/512H01L29/66681H01L29/7823
Inventor 约根德拉·亚达夫陈吉智柳瑞兴姚智文
Owner TAIWAN SEMICON MFG CO LTD