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A Complementary Power Amplifier

A power amplifier, amplifier technology, applied in power amplifiers, amplifiers, differential amplifiers, etc., can solve problems such as nonlinearity and excessive input power, and achieve the effect of improving linearity

Active Publication Date: 2020-03-31
RDA MICROELECTRONICS SHANGHAICO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in this application is to provide a CMOS power amplifier with high linearity, which can overcome the nonlinear problem caused by excessive input power

Method used

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  • A Complementary Power Amplifier
  • A Complementary Power Amplifier
  • A Complementary Power Amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The complementary power amplifier provided in this application is used to amplify the power of the input signal in to obtain the output signal out. The input signal in of the power amplifier may be a radio frequency signal or a baseband signal or the like.

[0022] see image 3 , which is Embodiment 1 of the complementary power amplifier provided in this application. The first embodiment includes a common source amplifier CS1, a common drain amplifier CD1, an inductor L1, an inductor L3 and an inductor L5. The common-source amplifier CS1 is an NMOS transistor, and the common-drain amplifier CD1 is a PMOS transistor. The gate bias voltage Vg1 is connected to the gate of the common source amplifier CS1 and the gate of the common drain amplifier CD1 through the inductor L1. The source of the common-source amplifier CS1 is grounded through the inductor L3, the drain of the common-source amplifier CS1 is connected to the source of the common-drain amplifier CD1, and the d...

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Abstract

Disclosed herein is a complementary power amplifier, which includes a first common-source amplifier and a first common-drain amplifier. The first common-source amplifier is an NMOS transistor. The first common-drain amplifier is a PMOS transistor. The source electrode of the first common-source amplifier is grounded via a third inductor. The drain electrode of the first common-source amplifier is connected with the source electrode of the first common-drain amplifier. The drain electrode of the first common-drain amplifier is grounded. The grid electrode of the first common-source amplifier is connected with the grid electrode of the first common-drain amplifier as the input end of signals. The drain electrode of the first common-source amplifier and the source electrode of the first common-drain amplifier are used as the output ends of signals. In the invention, by using the complementary structure of the NMOS transistor and the PMOS transistor, or the complementary structure of an NPN triode and a PNP triode, the input capacitance of the power amplifier is stabilized. Thus the linearity of the power amplifier is improved.

Description

technical field [0001] The present application relates to a CMOS power amplifier, in particular to a power amplifier using PMOS and NMOS to complement gate capacitance. Background technique [0002] Designing power amplifiers using standard CMOS technology faces challenges in many performance indicators, and some solutions have been proposed to improve the linearity of CMOS power amplifiers. [0003] In November 2004, "IEEE Journal of Solid-State Circuits" (IEEE Journal of Solid-State Circuits) Volume 39, Issue 11 contained an article "A Capacitance-Compensation Technique for Class AB CMOS Power Amplifiers to Improve Linearity" (ACapacitance-Compensation Technique for Improved Linearity in CMOS Class-ABPower Amplifiers), which discloses a linearization scheme of a CMOS power amplifier, such as figure 1 shown. The power amplifier adds a branch to the gate of the PMOS transistor-MP1 at the gate of the NMOS transistor-MN1, and the source and drain of the PMOS transistor-MP1 a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/32H03F3/193H03F3/21H03F3/45
CPCH03F1/3211H03F3/193H03F3/211H03F3/45179H03F2203/45034
Inventor 林甲富刘冠山郭天生
Owner RDA MICROELECTRONICS SHANGHAICO LTD