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SiC monocrystal growth apparatus allowing temperature field to be adjusted in real time and SiC monocrystal growing method using same

A growth device and real-time adjustment technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of radial temperature increase, growth interface temperature increase, and low thermal stress, etc., to achieve crystal structure maintenance Stable, low thermal stress, avoiding off-axis effect

Inactive Publication Date: 2017-06-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the present invention provides a SiC single crystal growth device capable of real-time adjustment of the temperature field. The device can adjust the temperature field in real time during the SiC single crystal growth process. The interface moves synchronously, which solves the problem that the growth interface temperature gradually increases and the radial temperature gradually increases in the existing SiC single crystal growth process, so that the SiC crystal structure remains stable and the thermal stress is low during the crystal growth process, thereby improving the crystal growth rate. Quality and Yield

Method used

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  • SiC monocrystal growth apparatus allowing temperature field to be adjusted in real time and SiC monocrystal growing method using same
  • SiC monocrystal growth apparatus allowing temperature field to be adjusted in real time and SiC monocrystal growing method using same
  • SiC monocrystal growth apparatus allowing temperature field to be adjusted in real time and SiC monocrystal growing method using same

Examples

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Embodiment 1

[0040] A SiC single crystal growth device capable of real-time adjustment of the temperature field, the structure is as follows figure 1 As shown, it includes a heating furnace arranged on the furnace frame 19. A growth chamber is arranged in the heating furnace. The growth chamber is a quartz chamber 12. The upper part of the quartz chamber 12 is connected to the upper sealing flange 2, and the center of the upper sealing flange 2 is arranged There is a temperature measuring window 1; the lower part of the quartz cavity 12 is connected to the lower sealing flange 18, the lower end of the lower sealing flange 18 is connected to the cross 22, the lower end of the cross 22 is connected to the molecular pump, and the side end of the cross 22 is connected to the mechanical pump. The temperature of the upper cover of the crucible can be measured by an infrared thermometer; the growth chamber can be evacuated by a mechanical pump and a molecular pump to make the growth chamber reach ...

Embodiment 2

[0045] The SiC single crystal growth device capable of real-time adjustment of the temperature field described in Example 1 differs in that:

[0046] The distance between the inner side of the induction coil and the outer wall of the quartz cavity is 1.5mm.

Embodiment 3

[0048] The method for growing a high-quality SiC single crystal using the above-mentioned SiC single crystal growth device, the steps are as follows:

[0049] (1) Vacuum the growth chamber to make the vacuum degree reach 10 -4 Pa;

[0050] (2) Start the transformer, and the induction coil heats the SiC single crystal growth device, so that the temperature in the crucible reaches 2273K-2773K, adjust the crystal growth pressure to 30-50mbar, and grow the crystal, and fill the inert gas during the crystal growth process,

[0051] (3) After the crystal starts to grow for 5 hours, start the translation motor to move the induction coil downward at a speed of 0.2mm / h. During the movement, the centerline of the induction coil and the centerline of the growth chamber keep coincident;

[0052] (4) After the crystal growth is completed, the translation motor is turned off, and the temperature is gradually lowered to room temperature to obtain a high-quality SiC single crystal.

[0053]...

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Abstract

The invention relates to a SiC monocrystal growth apparatus allowing the temperature field to be adjusted in real time and a SiC monocrystal growing method using the same. The apparatus includes a heating furnace located on a furnace frame; a bracing frame is arranged at the heating furnace side and above the furnace frame and is in sliding connection to a load-carrying support. The load-carrying support includes a coil fixing support and a load-carrying support arm. The coil fixing support includes a circular ring fixing support, which is provided with a coil support and is in fixed connection with the load-carrying support arm. The coil support is provided with an induction coil, the circular ring fixing support, the coil support and the induction coil sleeve the heating furnace, and the induction coil is in electrical connection with an intermediate-frequency transformer. When crystal grows, the induction coil stably moves in an axial direction up and down, which makes the temperature field synchronously move with a growth interface. The problem that the front temperature and the radial temperature gradually rises during a SiC monocrystal growing process is solved, and multi-form phase transition due to growth temperature variation in the SiC monocrystal growing process is prevented.

Description

technical field [0001] The invention relates to a SiC single crystal growth device capable of real-time adjustment of a temperature field and a method for growing a SiC single crystal by using the device, belonging to the technical field of crystal growth equipment. Background technique [0002] Compared with many other semiconductor single crystal materials, SiC crystal has high hardness (second only to diamond), high thermal conductivity (4.9W / cm K), and low thermal expansion coefficient (3.1-4.5×10 -6 / K), large band gap (2.40-3.26eV), high saturation drift speed (2.0-2.5×10 7 cm / s), the critical breakdown field is strong (2~3×10 6 V / cm), high chemical stability, strong radiation resistance and other excellent properties. These excellent properties enable SiC semiconductor devices to work in extreme environments of high temperature, high pressure, and strong radiation, have broad application prospects, and have an important impact on the future development of the semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/002C30B29/36
Inventor 胡小波杨祥龙彭燕陈秀芳徐现刚
Owner SHANDONG UNIV