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Array substrate, driving method thereof, display panel and display device

A technology for array substrates and thin film transistors, applied to display panels and display devices, its driving method, and the field of array substrates, can solve the problems of large leakage currents of thin film transistors, achieve the effects of small leakage currents, stabilize circuits, and reduce power consumption

Active Publication Date: 2020-03-24
XIAMEN TIANMA MICRO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide an array substrate, a driving method thereof, a display panel, and a display device, so as to solve the problem of large leakage current of thin film transistors in the prior art

Method used

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  • Array substrate, driving method thereof, display panel and display device
  • Array substrate, driving method thereof, display panel and display device
  • Array substrate, driving method thereof, display panel and display device

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Embodiment Construction

[0027] Specific implementations of the array substrate, its driving method, display panel, and display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] The thickness of each film layer and the size of the area shape in the drawings do not reflect the real proportion of the array substrate, and the purpose is only to schematically illustrate the content of the present invention.

[0029] An embodiment of the present invention provides an array substrate, such as Figure 4a with Figure 4b As shown, it includes: a thin film transistor 100, and the thin film transistor 100 includes: an active layer 110, a gate electrode 120, a control electrode 130, a gate insulating layer 140 disposed between the gate electrode 120 and the active layer 110, and disposed on the control The buffer layer 150 between the electrode 130 and the active layer 110; wherein,

[0030] The thickness of the b...

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Abstract

The invention discloses an array substrate, a driving method thereof, a display panel and a display device. By setting a control electrode on the side of the active layer of a thin film transistor away from the gate electrode, and by controlling the control electrode located between the control electrode and the active layer The thickness of the buffer layer makes the thickness of the buffer layer greater than the thickness of the gate insulating layer between the gate electrode and the active layer to adjust the distance between the control electrode and the active layer to be greater than the distance between the gate electrode and the active layer. distance, and at least when the gate electrode is loaded with an off voltage to make the thin film transistor in an off state, the first control voltage is applied to the control electrode to affect the Vg voltage of the thin film transistor at this moment, thereby affecting the threshold voltage Vth of the thin film transistor, so that the Id of the thin film transistor The ‑Vg curve shifts to ensure that the leakage current Id is relatively small when the thin film transistor is turned off, achieving the effect of stabilizing the circuit and reducing power consumption.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an array substrate, a driving method thereof, a display panel and a display device. Background technique [0002] At present, with the development of science and technology, low-temperature polysilicon has been used to make thin film transistors in display devices such as liquid crystal display panels, specifically, array substrates containing low-temperature polysilicon thin film transistors such as figure 1 As shown, it generally includes a light-shielding layer 001, a buffer layer 002, a polysilicon layer that is an active layer 003, a gate insulating layer 004, a gate electrode 005, an interlayer insulating layer 006, a source-drain electrode 007, and The planarization layer 008, the first transparent electrode 009, the passivation layer 010 and the second transparent electrode 011; wherein, the first transparent electrode 009 is used as a common electrode, and the second tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12G02F1/1362
CPCG02F1/1362H01L27/124H01L27/1248G09G3/3648G09G3/3688G09G2300/0417G09G2310/0297G09G2320/0214H01L29/78633H01L29/78648H01L29/42384H01L2029/42388H01L29/78672H01L27/1251G09G3/2092G09G2310/0291G09G2330/023H01L21/31116H01L27/1274H01L29/78621H01L29/78675
Inventor 文亮
Owner XIAMEN TIANMA MICRO ELECTRONICS
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