Cleaning fluid used after polishing of metal substrate and application method thereof

Abstract

The invention provides cleaning fluid used after polishing of a metal substrate. The cleaning fluid comprises at least one kind of organic acid, an organic phosphoric acid compound and at least one anionic surfactant. The cleaning fluid can be used for surface cleaning after a wafer containing metal is polished. Organic matter such as abrasive particles, metal ions and metal corrosion inhibitors remaining on the wafer surface after polishing can be removed, and the number of surface defects is reduced.

Description

technical field [0001] The invention relates to a cleaning liquid used for polishing a metal substrate and a using method thereof. Background technique [0002] Metal materials such as copper, aluminum, tungsten, etc. are commonly used wire materials in integrated circuits. Chemical Mechanical Polishing (CMP) has emerged as the primary technique for wafer planarization during device fabrication. Metal chemical mechanical polishing fluids usually contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-covered silicon dioxide, ceria, titanium dioxide, polymer abrasive particles, etc. After the metal CMP process, the surface of the wafer will be polluted by metal ions and abrasive particles in the polishing solution, which will affect the electrical characteristics of the semiconductor and the reliability of the device. Moreover, the residu...

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Problems solved by technology

However, these cleaning solutions all have the disadvantage of single cleaning effect, which can only remove metal ions, re

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