A Memristor-Based XOR Gate Circuit and Its Design and Manufacturing Method

Abstract

The invention discloses a memristor-based XOR gate circuit and a designing and manufacturing method thereof, which aims to solving the problem that a currently available memristor-based auxiliary logic MACIG gate set is incomplete. Therefore, the invention provides a new type of memristor-based XOR gate circuit designing method. The XOR gate of the invention is improved on the basis of the MAGIC OR gate. According to the invention, the two ends of the output memristor of the OR gate circuit are connected with memristors in parallel and the improved gate circuit is capable of obtaining correct XOR gate logic operation result. The XOR gate adopts fewer components with only four memristors and the excitation voltage sequence is simple, requiring only one stable and unchanging externally added excitation source. In addition, the energy comsumption of the XOR gate is low. Only with the exertion of short-term voltage, it is possible to realize the logic operations to the XOR gate. Beyond that, the XOR gate circuit has a simple structure and a small size.

Description

technical field [0001] The present invention relates to the technical field related to memristors, in particular to a memristor-based XOR gate circuit and a design and manufacture method. Background technique [0002] In the past few decades, the ultra-large-scale integrated circuit manufacturing industry using CMOS technology has been focusing on shrinking transistors, improving chip performance by reducing the size of transistors, and maintaining a steady growth rate of doubling every two years. This approach has been the source of development for the technological and economic revolution in the semiconductor industry for nearly 50 years. However, the focus of electronic design needs to shift to devices that are not just ever smaller, but increasingly capable. [0003] In 1971, Chinese scientist Professor Cai Shaotang proposed the concept of memristor. Since the resistance value of the element can change with the amount of charge flowing through it, generally speaking, a ...

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Problems solved by technology

[0009] In order to solve the above-mentioned existing problems, the present invention provides a memristor-based XOR gate circuit and a design and manufacture method. Aiming at the problem that the existing MACIG gate set is incomplete, the XOR gate circuit of the memristor is redesigned. The selected circuit components are few, the excitation voltage sequence is simple, the energy consumption is low, the circuit structure is simple, and the size is small. The gate circuit is constructed by using four threshold adaptive memristors, which are characterized in that: two of the four threshold adaptive memristors R in1 , R in2 As an input memristor a memristor as an output memristor R out A memristor acts as an auxiliary memristor R aid , two memristors R as input memristors in1 , R in2 connected in series with the output memristor R out in series, the output memristor R out An auxiliary memristor R is connected in parallel at both ends aid , the two memristors R in1 , R in2 The resistance is the input value of the logic gate, the output memristor R out The resistance is the output value of the logic gate

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