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Y<3+> and Sn<4+> composite donor doped ZnO voltage-sensitive ceramic and preparation method thereof

A donor-doped, varistor-sensitive ceramic technology, applied in the field of ZnO varistor ceramics and its preparation, can solve the problem of aging life of ZnO varistor, decrease in pulse current tolerance performance index, inability to meet industrial applications, large difference in ion radius, etc. problems, to achieve the effects of enhancing the aging life, suppressing the decline of the nonlinear coefficient, and suppressing the growth of the leakage current

Active Publication Date: 2017-07-14
贵阳高新益舸电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the ion radius of Al is only 0.0535nm, and the ion radius of Zn is 0.074nm, the difference between the ion radii of the two is relatively large, and the formation of donor doping will lead to serious distortion of the ZnO lattice, which will inevitably lead to the aging life of ZnO varistors, pulse Performance indicators such as current tolerance have dropped significantly, which can no longer meet the needs of industrial applications

Method used

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  • Y&lt;3+&gt; and Sn&lt;4+&gt; composite donor doped ZnO voltage-sensitive ceramic and preparation method thereof

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Embodiment 1

[0026] Embodiment 1: a kind of Y 3+ , Sn 4+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 90.5 parts, Bi 2 o 3 : 3.0 parts, MnO 2 : 0.5 parts, Sb 2 o 3 : 2.5 parts, Co 2 o 3 : 1 part, Cr 2 o 3 : 0.5 part, 2 parts of seed crystal dopant material, the mass fraction ratio of described seed crystal dopant material is ZnO:Sn(NO 3 ) 4 :Y(NO 3 ) 3 =94:4.5:1.5.

Embodiment 2

[0027] Embodiment 2: a kind of Y 3+ , Sn 4+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 87 parts, Bi 2 o 3 : 2.0 parts, MnO 2 : 0.4 parts, Sb 2 o 3 : 1.5 parts, Co 2 o 3 : 0.5 parts, Cr 2 o 3 : 0.2 parts, seed dopant: 1 part; the seed dopant is ZnO, SnO 2 and Y 2 o 3 , whose mass fraction ratio is ZnO:SnO 2 : Y 2 o 3 =90:0.1:0.1.

Embodiment 3

[0028] Embodiment 3: a kind of Y 3+ , Sn 4+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant material, and the base material includes ZnO: 95 parts, Bi 2 o 3 : 4.0 parts, MnO 2 : 0.7 parts, Sb 2 o 3 : 3.5 parts, Co 2 o 3 : 1.5 parts, Cr 2 o 3 : 1.0 parts, seed dopant: 5 parts; the seed dopant is ZnO, SnO 2 and Y 2 o 3 , whose mass fraction ratio is ZnO:SnO 2 : Y 2 o 3 =95:5:5.

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Abstract

The invention discloses Y<3+> and Sn<4+> composite donor doped ZnO voltage-sensitive ceramic and a preparation method thereof. The voltage-sensitive ceramic comprises base materials and doping materials. The base materials contain, by weight, 87-95 parts of ZnO, 2.0-4.0 parts of Bi2O3, 0.4-0.7 part of MnO2, 1.5-3.5 parts of Sb2O3, 0.5-1.5 parts of Co2O3, 0.2-1.0 part of Cr2O3, and 1-5 parts of seed crystal doping materials. The seed crystal doped materials include ZnO, SnO2 and Y2O3, wherein mass ratio of ZnO: SnO2: Y2O3 is 90-95: 0.1-5: 0.1-5. The Y<3+> and Sn<4+> composite donor doped ZnO voltage-sensitive ceramic has characteristics of reducing ZnO grain resistivity and controlling ZnO lattice distortion to finally achieve low residual voltage of ZnO varistor, long aging life and strong pulse current withstand capacity.

Description

technical field [0001] The invention relates to a ZnO varistor ceramic and a preparation method thereof, in particular to an Al-free 3+ Doped Y 3+ , Sn 4+ Composite donor-doped ZnO varistor ceramics and a preparation method thereof. Background technique [0002] ZnO varistor is made of ZnO as the main raw material, adding a small amount of Bi 2 o 3 、Co 3 o 4 , MnO 2 , Sb 2 o 3 、Cr 2 o 3 And other raw materials, prepared by ceramic sintering process. The varistor has the advantages of good nonlinearity and large flow capacity, and it has been widely used as a lightning surge protection component in electronic circuits and power systems. With the rapid development of microelectronic information technology, the requirements for miniaturization, integration and modularization of components are becoming more and more urgent. Miniaturized electronic components have high sensitivity and low overvoltage resistance level, which increases the demand for lightning protecti...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/626
CPCC04B35/453C04B35/62605C04B35/62615C04B2235/3225C04B2235/3241C04B2235/3267C04B2235/3275C04B2235/3293C04B2235/3294C04B2235/3298C04B2235/443C04B2235/96
Inventor 庞驰方超张宁周芳
Owner 贵阳高新益舸电子有限公司
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