Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of multi-level doped PBTE-based thermoelectric material and preparation method thereof

A technology of thermoelectric materials and multi-energy levels, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of reducing bipolar effect, mobility decline, and no experimental results, etc., to achieve high Thermoelectric Figure of Merit, Effect of Improving Thermoelectric Efficiency

Active Publication Date: 2018-08-07
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (1) Theoretically speaking, increasing the majority carrier concentration of a material must correspond to a decrease in the minority carrier concentration, thereby reducing the bipolar effect. However, from the perspective of optimizing ZT, each material has an optimal carrier concentration. Blindly increasing the carrier concentration will reduce the thermoelectric figure of merit of the material;
[0009] (2) The alloying process will inevitably bring about a sharp drop in mobility caused by lattice defects;
[0010] (3) The selection of the heterojunction barrier is an extremely difficult matter, and it is only a theoretical prediction at present, and there is no experimental result;
[0011] (4) Deep-level doping can effectively increase the bipolar diffusion temperature, but deep-level doping itself is difficult to ionize, and only a small part of impurities contribute to the carrier concentration, although more can be obtained at high temperatures. Carriers, but the carrier concentration is very low at low temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of multi-level doped PBTE-based thermoelectric material and preparation method thereof
  • A kind of multi-level doped PBTE-based thermoelectric material and preparation method thereof
  • A kind of multi-level doped PBTE-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A multi-level doped PbTe-based thermoelectric material with a molecular formula of In x Pb 1-x Te 0.996 I 0.004 , where 00.00125 Pb 0.99875 Te 0.996 I 0.004 ,In 0.0025 Pb 0.9975 Te 0.996 I 0.004 ,In 0.0035 Pb 0.9965 Te 0.996 I 0.004 and In 0.005 Pb 0.995 Te 0.996 I 0.004 .

[0041] Step S1: Vacuum-seal In, Pb, Te, and I in a quartz tube according to the ratio, raise the temperature to 1000° C. at a heating rate of 200° C. / h, and hold the temperature for 6 hours.

[0042] Step S2: Then lower the temperature to 600° C. at a rate of 200° C. / h, anneal at this temperature for 50 hours, and finally lower the temperature to room temperature at a rate of 200° C. / h.

[0043] Step S3: Clean and pulverize the obtained ingot in a glove box, and heat press the powder at 600° C. and 80 MPa for 2 minutes with a DC hot press.

[0044] Then the materials prepared above were tested and analyzed. figure 1 Doping In for multiple energy levels x Pb 1-x Te 0.996 I 0.0...

Embodiment 2

[0050] Multi-level doping of PbTe-based thermoelectric material In with different A elements x Pb 1-x Te 1-y A y , wherein, A is Cl, Br, I, Ga, Al; 0<X≤0.02, 0<Y≤0.03, the preparation method is the same as in Example 1, and its performance analysis is carried out.

[0051] Table 1 shows the data of thermoelectric figure of merit Z and thermoelectric efficiency (low temperature end 50°C) at 500°C for the examples using deep-level impurity In and different shallow-level impurities A and the corresponding comparative examples.

[0052] Table 1

[0053]

[0054] It can be seen from the data in Table 1 that the thermoelectric materials obtained by co-doping with deep-level impurity In and different shallow-level impurities A have high thermoelectric figure of merit compared with the comparative examples, which improves the thermoelectric efficiency of the material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a multi-level doped PbTe-based thermoelectric material and a preparation method thereof, the molecular formula of the multi-level doped PbTe-based thermoelectric material is InxPb1-xTe1-yAy; wherein, A is Cl, Br, I, Ga, Al; 0

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a multi-energy level doped PbTe-based thermoelectric material and a preparation method thereof. Background technique [0002] The material of a thermoelectric generator or thermoelectric cooler is called a thermoelectric material, which is a material that can realize the interactive transformation of electrical energy and thermal energy. Thermoelectric power generation and refrigeration devices made of thermoelectric materials have the advantages of no pollution, no noise, easy maintenance, safety and reliability. The earliest Soviets used kerosene lamps or wood as a heat source to power domestic radio receivers in remote areas. With increasing interest in space exploration, and increasing resource exploration and exploration activities on Earth, there is a need to develop a class of power systems that can supply their own energy and leave it alone. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/20H01L35/34H10N10/852H10N10/01H10N10/854
CPCH10N10/854H10N10/852H10N10/01
Inventor 张倩王心宇张宗委李孝芳
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com