NAND flash-based threshold voltage check method and apparatus, and NAND storage device

Abstract

Embodiments of the invention disclose an NAND flash-based threshold voltage check method and apparatus, and an NAND storage device. The method is applied to the NAND storage device. The storage device comprises a plurality of word lines and a plurality of NAND memory units; each word line is connected with the corresponding memory unit; the word lines include virtual word lines and data word lines; and each group of the data word lines corresponds to each group of the virtual word lines. The method comprises the steps of loading an erasure voltage on the data word line, corresponding to the selected memory unit, to the virtual word line corresponding to the data word line when the selected storage unit is subjected to erasure operation, thereby executing the erasure operation on the memory unit corresponding to the virtual word line. According to the method and the apparatus, the influence on data reading / writing accuracy of the memory unit corresponding to the data word line due to right shift of a threshold voltage of the memory unit corresponding to the virtual word line can be prevented; and the threshold voltage of the memory unit corresponding to the virtual word line is adjusted to be in a normal range.

Description

technical field [0001] Embodiments of the present invention relate to memory technology, and in particular to a threshold voltage verification method and device based on NAND flash memory, and a NAND storage device. Background technique [0002] NAND flash memory is a kind of Flash memory, which belongs to non-volatile semiconductor memory. NAND flash memory includes many data blocks, and each data block is composed of many memory cells for reading and writing data. These memory cells are arranged in an array. A specific memory cell in the array is usually selected through a word-line (WL) and a pair of bit-lines (Bit-line, BL). The word line is usually coupled to each memory cell in a row. One or more control gates of the cell, a bit line pair (BL pair), typically couple the storage point of each memory cell within a column to a sense amplifier. By controlling the high and low voltages of the word line and the bit line, the reading, writing and erasing operations of the m...

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a threshold voltage verification method, device, and NAND storage device based on NAND flash memory to solve the problem in the prior art that the memory cell corresponding to the data word line is affected by the right shift of the threshold voltage of the memory cell corresponding to the virtual word line. The problem of data read and write accuracy

Images