Manufacturing method for patterned sensitive metal or metal oxide material
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A technology of sensitive metals and processing methods, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as device performance impact
Active Publication Date: 2017-07-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0003] Embodiments of the present invention provide a processing method for patterning sensitive metals or metal oxide materials, which solves the problem of introducing water, oxygen and other substances when patterning sensitive metals and metal oxide materials in the semiconductor processing process in the prior art. Technical issues affecting device performance
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Embodiment 1
[0047] Embodiment 1: A processing method based on patterning of the sensitive metal Mg electrode cossbar structure, the specific steps are as follows:
[0048] Step 201: Sputtering a layer of Mg metal in a vacuum environment and covering it with a layer of Al 2 o 3 Dielectric layer, and then grow a layer of lower electrode through conventional photolithography, evaporation, and stripping processes, and then grow a parylene coating, and then photolithography, etching, and stripping processes to transfer the pattern on the photoresist to parylene on the coating;
[0049] Step 202: Use the parylene coating as a mask, and use Ar plasma physical etching method to etch away the Al 2 o 3 The dielectric layer and the Mg metal layer are patterned, and then the parylene coating is removed by mechanical stretching to realize the patterning of the cossbar structure of the Mg electrode.
Embodiment 2
[0050] Embodiment 2: A processing method based on metal oxide MgO patterning, the specific steps are as follows.
[0051] Step 301: sputtering a layer of MgO in a vacuum environment to cover a layer of SiO 2 Dielectric layer, and then grow the parylene coating, and then transfer the pattern on the photoresist to the parylene coating through photolithography, etching, and stripping processes;
[0052]Step 302: Use the parylene coating as a mask, and use Ar plasma physical etching to etch away the SiO 2 The dielectric layer and MgO are patterned, and then the parylene coating is removed by mechanical stretching.
[0053] One or more technical solutions provided in the embodiments of the present invention have at least the following technical effects or advantages:
[0054] The embodiment of the present invention is processed in a vacuum environment, and the contact between the sensitive metal and metal oxide materials and the air is avoided as much as possible; in the process ...
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Abstract
The invention relates to a manufacturing method for patterned sensitive metal or a metal oxide material. The manufacturing method comprises the following steps of enabling a layer of sensitive metal or metal oxide material to be grown on a substrate in a vacuum environment; enabling a layer of dielectric layer to be grown on the sensitive metal or metal oxide material; enabling a parylene coating layer to be grown on the dielectric layer; transferring a pattern on photoresist to the parylene coating layer by means of photoetching and etching methods; removing the photoresist by an acetone solution to realize patterning of the parylene coating layer; by taking the parylene coating layer as masking, etching the dielectric layer and the sensitive metal or the metal oxide material by a dry etching method at the same time to realize pattern transferring; and removing the parylene coating layer by a mechanical stretching method to realize the patterning of the sensitive metal or the metal oxide material. By adoption of the manufacturing method, contact between the sensitive metal and the metal oxide material and air can be avoided as for as possible, so that influence to the performance of the semiconductor device can be avoided.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a processing method for patterning sensitive metal or metal oxide materials. Background technique [0002] In the preparation of modern micro-nano functional devices, the application of many physical properties puts forward high requirements on the quality of materials and processing technology. Among them, when rare metals, transition metals, and group III and V metals are prepared into ultra-thin films, the materials will become extremely sensitive. Even different atomic ratios in compound materials often exhibit widely different characteristics in terms of physical properties. Even commonly used water, oxygen and other substances will greatly destroy the material properties (lattice structure, electrical properties, magnetic properties, etc.). For this reason, the sensitive material is required to be completely isolated from water, oxygen and other substances during p...
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