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A Method for Determining Parameters of Soi MOSFET Total Dose Model

A technology for model parameters and determination methods, which is applied in the field of device intensive model parameter extraction, can solve problems such as low accuracy and complex extraction process of total dose intensive model parameters, and achieve the effect of improving accuracy

Active Publication Date: 2020-08-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for determining the parameters of the SOI MOSFET total dose model, which is used to solve the problem of complex extraction process and low accuracy of the SOI MOSFET total dose intensive model parameters in the prior art. question

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  • A Method for Determining Parameters of Soi MOSFET Total Dose Model
  • A Method for Determining Parameters of Soi MOSFET Total Dose Model
  • A Method for Determining Parameters of Soi MOSFET Total Dose Model

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[0034] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] see Figure 1 to Figure 4 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily ...

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Abstract

The invention provides an SOI MOSFET total dose model parameter determination method. The SOI MOSFET total dose model parameter determination method comprises following steps of S1: obtaining transfer characteristic data and transmission characteristic data of an SOI MOSFET in on-off two working states under different doses of irradiation; S2: screening data obtained in the step S1, and leading test data into parameter extraction software; S3: extracting upper corner equivalent transistor parameters and field oxygen sidewall equivalent transistor parameters; S4: leading out a total dose compact model card file; S5: leading a total dose model of each single point into the parameter extraction software, and generating a total dose Bin model card file of the whole area. According to the invention, parameter extraction is carried out in a manner of being separated from a main transistor, the sensitive parameter of each area in a physical model is refined, the parameter fitting accuracy is improved, when being affected by the total dose radiation effect, the hump effect generated by the SOI MOSFET in a subthreshold area can be fitted accurately, the model exists in a Bin model card manner, the device total dose effect of the whole area size can be simulated.

Description

technical field [0001] The invention belongs to the technical field of device intensive model parameter extraction, in particular to a method for determining parameters of an SOI MOSFET total dose model. Background technique [0002] With the continuous development of space technology, electronic products used in the information society are more and more widely used in space exploration and space navigation. All kinds of rays existing in space will cause irreversible damage to electronic products, thus making space instruments malfunction. SOI (Silicon-On-Insulator) is a silicon-on-insulator technology, which can well reduce the radiation effects of single-event flipping and single-event latch-up caused by space particles on the circuit, but because there are still a large number of silicon, two The silicon oxide interface (shallow trench isolation field oxygen, buried oxygen) causes radiation particles to generate a large amount of redundant charges at these interfaces, fu...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/20
CPCG06F30/367
Inventor 陈静黄建强罗杰馨柴展吕凯何伟伟
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI