Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of thin film transistor, array substrate and display device

A technology of thin film transistors and array substrates, applied in the field of display, capable of solving the problems of reduced relative area of ​​pixel electrodes 50 and small aperture ratio of sub-pixel units, etc.

Active Publication Date: 2019-12-31
BOE TECH GRP CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if figure 2 As shown, the connection block 300 is located in the area other than the gate 10, and is made of opaque material. In this way, for a sub-pixel, due to the relatively large area of ​​the connection block 300, the pixel electrode The relative area of ​​50 is reduced, that is, the aperture ratio of the sub-pixel unit is small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of thin film transistor, array substrate and display device
  • A kind of thin film transistor, array substrate and display device
  • A kind of thin film transistor, array substrate and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] by image 3 The connection block 300 is partly located between the first drain 321 and the second drain 322 as an example, for clearer reference to the image 3 TFT and figure 1 Aperture ratios of TFT sub-pixel units are compared, such as Figure 5 shown, to include image 3 TFT and figure 1 The schematic diagram of the structure of the gate and the connection block (the black dotted line part), so that the aperture ratio between the two can be compared more clearly.

[0048] to combine figure 1 and image 3 ,Such as Figure 5 shown, assuming image 3 In the first subsection 311 and the third subsection 313 compared to figure 1 The lengthened distance is H, the second subsection 312 is compared to figure 1 The shortened distance is H, compared to figure 1 Medium TFT, image 3 The size of the reduced and increased parts of the middle channel width W is equal, that is, figure 1 and image 3 In comparison, the channel width W of the two is the same; then when ...

Embodiment 2

[0053] by Figure 4 The connection blocks 300 are all located between the first drain 321 and the second drain 321, and the upper edge of the connection block 300 is flush with the upper edges of the first drain 321 and the second drain 322, for a clearer alignment include Figure 4 TFT and figure 1 Aperture ratios of TFT sub-pixel units are compared, such as Figure 6 shown, to include Figure 4 TFT and figure 1 The schematic diagram of the gate and the connection block (the black dotted line part), so that the aperture ratio between the two can be compared more clearly.

[0054] to combine figure 1 and Figure 4 ,Such as Figure 6 As shown, in the case where the upper edge of the connection block 300 is flush with the upper edges of the first drain 321 and the second drain 322, without considering the lateral connection connecting the two sub-parts 301 in the connection block 300 in the prior art When the gap h between the sub-section 302 and the gate 10 (refer to f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention provide a thin film transistor, an array substrate, and a display device, which relate to the field of display technology. When applied to the field of display, it is beneficial to increase the number of sub-pixel units when the width-to-length ratio of the channel is constant. Opening rate. The thin film transistor includes a gate, a semiconductor active layer, a source, and a drain; the source includes a connection portion and sequentially arranged in parallel with a first sub-section, a second sub-section, and a third sub-section, wherein the first sub-section of the sub-section At one end, the connection part connects the first sub-section, the second sub-section, and the third sub-section to form two adjacent recesses; at the second end of the sub-section, the distance from the end of the second sub-section to the connection part is less than The distance from the end of the first sub-section and the third sub-section to the connection part; the drain includes a connection block and a first drain and a second drain respectively located in two recesses, the connection block is at least partly located at the first drain and the second drain to connect the first drain and the second drain.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate and a display device. Background technique [0002] In the field of display technology, thin film transistors (Thin Film Transistor, TFT for short), as an important device for manufacturing display devices, play an important role in the display quality of display devices. Generally, a sub-pixel includes at least one TFT, and the TFT with a double U-shaped structure is widely used because it can realize a large working current. [0003] Such as figure 1 As shown, it is a TFT with a double U-shaped structure in the array of an existing display device, and the TFT includes a gate 10 , an active layer 20 , a source 31 , and a drain 32 . Wherein, the source 31 of the TFT is a parallel double U-shaped structure, and the drain 32 includes two sub-parts 301 respectively located in the two U-shaped recesses, and the two sub-parts 301 are conne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/12
CPCH01L27/1214H01L29/78618H01L27/1222H01L29/0847H01L29/41733H01L29/42384H01L29/66765
Inventor 顾可可杨妮李辉刘信
Owner BOE TECH GRP CO LTD