High voltage pmos drive circuit
A driving circuit and high-voltage technology, applied in the field of high-voltage PMOS driving circuits, can solve the problems of power consumption, efficiency, frequency limitation, etc., and achieve the effect of reducing chip area, high conversion efficiency, and reducing cost
Active Publication Date: 2021-03-02
NORTH-CHINA INTEGRATED CIRCUIT CO LTD
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Problems solved by technology
However, since the source-gate voltage difference of high-voltage PMOS power transistors does not exceed 20V (the maximum does not exceed 30V), high-voltage PMOS power transistors can generally only be driven by discrete circuits, and power consumption, efficiency, and frequency are greatly affected. limit
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[0016] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0017] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0018] Such as figure ...
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The present invention disclosed a high -voltage PMOS driving circuit involving the field of driving circuit technology used in field -effect transistors.The driving circuit includes a circuit, a pulse signal generated circuit, a level shifting circuit, a trigger, a buffer circuit, and a VS voltage generated circuit, so that the enable signal input terminal EN and the signal input port INPUT, respectively.The input port A and B are connected. The output port O connected pulse signal generated by the non -door output port IN in the input port IN, and the two output ports of the pulse signal generated circuit O_1, O_2 respectively connect the two input ports of the level shift circuit, respectively.In1, IN2, the two output ports of the level shift circuit O_1, O_2 are connected to the two input ports of the hair device, the input port IN of the output port connecting the buffer circuit in the output port of the trigger, and the output port of the output port of the buffer circuit output port HOEssenceThe structure of the drive circuit is simple, easy to achieve, small power consumption, small switching loss, high conversion efficiency, wide working voltage range, and no self -raising circuit.
Description
technical field [0001] The invention relates to the technical field of drive circuits applied to field effect transistors, in particular to a high-voltage PMOS drive circuit. Background technique [0002] The drive circuit amplifies the power of the low-voltage logic control signal to drive the power tube to work reliably. Power tubes are generally divided into PMOS power tubes and NMOS power tubes. The ultimate goal of driving circuit design is to make power switching devices work in close to ideal switching states, reduce switching losses, and improve overall system efficiency and reliability. Traditional driver circuits are used to drive NMOS power transistors. Compared with NMOS power transistors, driving PMOS power transistors has smaller switching losses. Moreover, driving the PMOS power tube does not require a bootstrap circuit (boost circuit) structure, and the power tube can be turned on and off for a longer period of time or even kept in the on state. It is very...
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IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 张在涌赵永瑞张浩谭小燕贾东东
Owner NORTH-CHINA INTEGRATED CIRCUIT CO LTD