Unlock instant, AI-driven research and patent intelligence for your innovation.

Surface potential measuring method

A technology of surface potential and measurement method, applied in measurement devices, instruments, scanning probe microscopy, etc., can solve the problems of measurement sample surface potential error, uncertainty of conversion coefficient, inability to accurately quantify the proportional coefficient X, etc., to achieve reliable Quickly measure, solve the effect of inaccurate surface potential value measurement

Inactive Publication Date: 2017-08-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this test method is simple, direct and less disturbing, due to the conversion coefficient G of the system ω , G 2ω Uncertainty, which leads to the inaccurate quantification of the proportionality factor X, which makes the measurement of the surface potential of the sample by the double harmonic Kelvin probe force microscope have a large error
[0009] Therefore, the traditional surface potential measurement method based on the double harmonic Kelvin probe force microscope technology has the disadvantage of large error.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface potential measuring method
  • Surface potential measuring method
  • Surface potential measuring method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] In this embodiment, the elastic coefficient of the conductive probe used is 2.18 N / m, and the resonance frequency of the probe is 75 kHz. pass figure 2 The test system shown, the specific measurement steps are as follows:

[0030] Step 1: Test Calibration

[0031] 1) Inject argon plasma into SrTiO 3 On the surface of the single crystal sample, a strip-shaped conductive region with a length L of 150 μm and a width W of 20 μm is finally formed; then, platinum electrodes are plated on both ends of the width of the SrTiO3 conductive region by magnetron sputtering, and the platinum electrode and the strip-shaped conductive region are ohm contact, to obtain a calibration sample with a structure such as figure 1 shown;

[0032] 2) Test with a multimeter to obtain the surface resistance R=45kΩ of the strip-shaped conductive region, apply a constant current of I=50μA between the platinum electrodes, and calculate the theoretical unit voltage drop value ΔVt=(I×R) / L=0.015 on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of material tests, and more specifically relates to a surface potential measuring method based on a Kelvin probe force microscope technology. A potential proportion coefficient during the test of the surface potential by a double-harmonic Kelvin probe force microscope is calibrated through sample calibration, the problem of inaccurate measurement of the surface potential value due to the indeterminate coefficient is solved, and reliable and rapid measurement of the sample surface potential is realized.

Description

technical field [0001] The invention belongs to the technical field of material testing, and more specifically relates to a surface potential measurement method based on Kelvin probe force microscope technology. [0002] technical background [0003] The surface potential measurement of the microscopic region of materials is of great significance for the miniaturization research of electronic devices. The commonly used measurement method of the surface potential of the microscopic area is mainly the Kelvin probe force microscopy technique. Kelvin probe force microscopy is a method to measure the surface potential through the electrostatic force between the probe and the surface of the sample. The spatial resolution can reach the nanometer level, and the potential resolution can reach the millivolt level. Kelvin probe force microscopy can be divided into traditional Kelvin probe force microscopy and open-loop Kelvin force microscopy. The traditional Kelvin probe force micros...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01Q60/30G01Q60/40
Inventor 岳虎虎曾慧中何月张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA