Atomic layer deposition method and its structure
A direct deposition, metal layer technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of affecting the performance of the device, not proving that the existing technology fully meets the requirements, etc.
Active Publication Date: 2020-04-07
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
Additionally, in some existing processes, poor metal layer deposition can cause gaps or voids in the metal layer, adversely affecting device performance
[0004] Therefore, the existing technology has not been proven to fully meet the requirements in all respects
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[0015] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relations...
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Abstract
A method and structure that provides a pre-deposition process (eg, of a work function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over the substrate, and a work function metal layer is deposited over the gate dielectric layer. The work function metal layer has a first thickness. Then, a pretreatment process of the work function metal layer may be implemented, wherein the pretreatment process removes the oxidized layer from the top surface of the work function metal layer to form a treated work function metal layer. The treated work function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pretreatment process, another metal layer is deposited over the treated work function metal layer. Embodiments of the present invention relate to an atomic layer deposition method and its structure.
Description
technical field [0001] Embodiments of the present invention relate to an atomic layer deposition method and its structure. Background technique [0002] The electronics industry has experienced an ever-increasing demand for smaller and faster electronic devices capable of simultaneously supporting more functions of increasing complexity and sophistication. Accordingly, there is a continuing trend in the semiconductor industry to manufacture low cost, high performance, low power integrated circuits (ICs). To date, these goals have been largely achieved by scaling down semiconductor IC dimensions (eg, minimum feature size), thereby increasing production efficiency and reducing associated costs. However, this scaling down also creates an increased complexity of the semiconductor fabrication process. Accordingly, achieving continued advances in semiconductor ICs and devices requires similar advances in semiconductor manufacturing processes and technologies. [0003] For examp...
Claims
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IPC IPC(8): H01L21/28H01L21/285H01L29/49
CPCH01L21/28088H01L21/28556H01L29/4966H01L29/518H01L29/517H01L21/0228H01L21/28194H01L21/02312H01L21/02205H01L21/02304H01L21/0262H01L21/28097H01L21/28518H01L21/28568H01L27/0886H01L21/67167
Inventor 李欣怡蔡承晏李达元
Owner TAIWAN SEMICON MFG CO LTD