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Method for inducing phase-change material film crystallization by using ultrashort pulse pico-second lasers at different wavelengths

A picosecond laser and ultrashort pulse technology, applied to electrical components and other directions, can solve problems such as difficulty in irradiating energy and wasting time

Inactive Publication Date: 2017-08-04
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the choice of irradiation energy will be very difficult, requiring multiple experiments and inspections, wasting a lot of time and energy

Method used

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  • Method for inducing phase-change material film crystallization by using ultrashort pulse pico-second lasers at different wavelengths
  • Method for inducing phase-change material film crystallization by using ultrashort pulse pico-second lasers at different wavelengths
  • Method for inducing phase-change material film crystallization by using ultrashort pulse pico-second lasers at different wavelengths

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Experimental program
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Embodiment 1

[0025] according to figure 1 Connecting the device, the control center can control the energy of the light source, the replacement of the lens and the movement of the working platform. The pulses emitted by the light source are irradiated on the surface of the material sample after being processed by the lens.

[0026] (1) Coating a layer of amorphous Ge with a thickness of 60 nm on the surface of the carbon support film by magnetron sputtering 2 Sb 2 Te 5 Film, take three samples numbered 1 to 3 respectively.

[0027] (2) Fix the sample 1 on the working platform, select the basic lens, the wavelength is 1064nm, the spot interval is 100nm, and the radiation energy is 22mj / cm 2 ;Remove the sample.

[0028] (3) Put sample 2 on the working platform, replace the frequency doubling lens, the wavelength is 532nm, and the radiation energy is 29mj / cm 2 .

[0029] (4) Put the sample 3 on the working platform, replace the frequency doubling lens, the wavelength is 355nm, and the ...

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Abstract

Provided is a method for inducing the phase-change material film crystallization by using ultrashort pulse pico-second lasers at different wavelengths, belonging to the technical field of film crystallization. The device includes a control center and a base light source device that are connected, the light emitted by the base light source is irradiated on a film via a lens. The method includes the following steps of (1) plating a film on the selected substrate by means of magnetron sputtering; (2) using the material obtained in (1), and using a basic lens to irradiate the material with the laser in appropriate energy under the same base light source to make the material undergo phase change, wherein the base light is a pico-second pulse laser at the wavelength of 1064nm; or replacing the lens, under the effect of a frequency multiplication crystal, irradiating the material with the laser in appropriate energy as the wavelength changing into 532nm or 355 nm to make the material undergo phase change.

Description

technical field [0001] The invention relates to a method for using ultrashort pulse picosecond lasers of different wavelengths to induce the crystallization of a phase change material thin film, and belongs to the technical field of film crystallization. Background technique [0002] The most fundamental feature of phase change materials is their ultra-fast crystallization / amorphization and high recyclability. However, there are not many materials that meet this feature. At present, the most widely used is the germanium antimony tellurium ternary alloy phase change material. Among them Ge 2 Sb 2 Te 5 Due to its relatively high crystallization temperature, its stability in the amorphous state is relatively good, that is, its data storage stability is good, so it has been widely studied, and it is also the most widely used phase change material so far. However, with the progress of the times, the amount of information that needs to be stored and read is increasing, so the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/041
Inventor 王泽朦刘富荣杨继峰
Owner BEIJING UNIV OF TECH
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