Formation method of semiconductor structure

Abstract

A formation method of a semiconductor structure comprises the steps of forming a substrate, wherein the substrate comprises a peripheral region, and the peripheral region is used for forming an input-output device; forming pseudo gate structure on a surface of the substrate, wherein the pseudo gate structure comprises a pseudo gate, a pseudo gate structure arranged on the peripheral region is a peripheral pseudo gate structure; performing a light doping leakage process on the substrate at two sides of the peripheral pseudo gate structure to form a first doping layer; annealing the first doping layer so as to homogenize distribution of doping ions in the first doping layer; forming a source region or a drain region in the substrate at the two sides of the pseudo gate structure; and forming a metal gate structure. After the step of forming the first doping layer, the first doping layer is annealed, so that the distribution of the doping ions in the first doping layer is homogenized, the performance of a first punchthrough prevention layer can be effectively prevented, a shallow junction is favorably maintained, a short channel effect is further prevented, a leakage current of a channel is reduced, and the performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] In semiconductor devices, transistors are an important basic device. The basic structure of a transistor includes three main areas: source (Source), drain (Drain) and gate (Gate). Wherein the source and drain are formed by high doping. According to different device types, it can be divided into N-type doping (NMOS) and P-type doping (PMOS). [0003] With the development of integrated circuits to ultra-large-scale integrated circuits, the circuit density inside the integrated circuit is increasing, and the number of components contained in the integrated circuit is also increasing, and the size of the components is also reduced. As the size of the MOS device decreases, the channel of the MOS device shortens accordingly. Due to the shortened channel, the slow-changing channel approximation o...

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Problems solved by technology

[0005] However, the transistors formed by this method still have the problem of junction leakage, which affects the performance of the formed devices.

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