Preparation method for partially-doped crystalline silicon solar cell and prepared cell
A technology for solar cells and local doping, applied in the field of solar cells, can solve the problems of complicated preparation process, low doping concentration, and inability to further improve the performance of solar cells, and achieve the effects of low equipment investment and convenient process
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Embodiment 1
[0074] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof, the structure of the partially doped crystalline silicon solar cell is as follows Figure 7-9 As shown, it includes a crystalline silicon layer 1, a passivation layer 2 and a first metal electrode layer 3 which are sequentially arranged on the back of the crystalline silicon layer 1, the passivation layer 2 has a plurality of openings, and the openings are filled with For the first metal electrode, the crystalline silicon layer 1 is doped into the crystalline silicon layer along the opening to form a local silicon-aluminum alloy 4 and a local boron-aluminum back field 5 .
[0075] The front of the crystalline silicon layer 1 is provided with a textured diffusion layer 6 , a textured anti-reflection layer 7 and a textured silver electrode 8 in sequence; the back of the crystalline silicon layer 1 is distributed with back silver electrodes 9 .
[0076] Wherein, the ...
Embodiment 2
[0082] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof. The structure of the partially doped crystalline silicon solar cell is the same as that of the implementation except that the passivation layer 2 is a combination of aluminum oxide and silicon oxide films. Same as in Example 1.
[0083] In the preparation method of the partially doped crystalline silicon solar cell, except that the molar ratio of boron, silicon and aluminum in the doped borosilicate-aluminum medium described in step (2) is 4:8:100, wherein the boron element comes from Except for diboron trioxide, other preparation processes are the same as the preparation method in Example 1.
Embodiment 3
[0085] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof. The structure of the partially doped crystalline silicon solar cell is the same as that of the passivation layer 2 except that the passivation layer 2 is a combination of silicon nitride and silicon oxide films. Same as in Example 1.
[0086] In the preparation method of the partially doped crystalline silicon solar cell, except that the molar ratio of boron, silicon and aluminum in the borosilicate-aluminum medium described in step (2) is 12:10:100, other preparation processes are Same as the preparation method in Example 1.
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