Preparation method for partially-doped crystalline silicon solar cell and prepared cell

A technology for solar cells and local doping, applied in the field of solar cells, can solve the problems of complicated preparation process, low doping concentration, and inability to further improve the performance of solar cells, and achieve the effects of low equipment investment and convenient process

Inactive Publication Date: 2017-08-15
CSI CELLS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the problem that the battery performance of the solar cell cannot be further improved due to the low doping concentration of the existing PERC solar cell, and the preparation process of the existing PERL solar cell is cumbersome, the cost is high, and it is not conducive to industrial production. The present invention provides A method for preparing locally doped crystalline silicon solar cells and the prepared crystalline silicon solar cells

Method used

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  • Preparation method for partially-doped crystalline silicon solar cell and prepared cell
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  • Preparation method for partially-doped crystalline silicon solar cell and prepared cell

Examples

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Embodiment 1

[0074] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof, the structure of the partially doped crystalline silicon solar cell is as follows Figure 7-9 As shown, it includes a crystalline silicon layer 1, a passivation layer 2 and a first metal electrode layer 3 which are sequentially arranged on the back of the crystalline silicon layer 1, the passivation layer 2 has a plurality of openings, and the openings are filled with For the first metal electrode, the crystalline silicon layer 1 is doped into the crystalline silicon layer along the opening to form a local silicon-aluminum alloy 4 and a local boron-aluminum back field 5 .

[0075] The front of the crystalline silicon layer 1 is provided with a textured diffusion layer 6 , a textured anti-reflection layer 7 and a textured silver electrode 8 in sequence; the back of the crystalline silicon layer 1 is distributed with back silver electrodes 9 .

[0076] Wherein, the ...

Embodiment 2

[0082] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof. The structure of the partially doped crystalline silicon solar cell is the same as that of the implementation except that the passivation layer 2 is a combination of aluminum oxide and silicon oxide films. Same as in Example 1.

[0083] In the preparation method of the partially doped crystalline silicon solar cell, except that the molar ratio of boron, silicon and aluminum in the doped borosilicate-aluminum medium described in step (2) is 4:8:100, wherein the boron element comes from Except for diboron trioxide, other preparation processes are the same as the preparation method in Example 1.

Embodiment 3

[0085] This embodiment provides a partially doped crystalline silicon solar cell and a preparation method thereof. The structure of the partially doped crystalline silicon solar cell is the same as that of the passivation layer 2 except that the passivation layer 2 is a combination of silicon nitride and silicon oxide films. Same as in Example 1.

[0086] In the preparation method of the partially doped crystalline silicon solar cell, except that the molar ratio of boron, silicon and aluminum in the borosilicate-aluminum medium described in step (2) is 12:10:100, other preparation processes are Same as the preparation method in Example 1.

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Abstract

The invention provides a preparation method for a partially-doped crystalline silicon solar cell and the prepared cell. The preparation method comprises the steps of performing preprocessing, back surface passivation layer deposition, front surface antireflection layer deposition, back surface partial opening, and back surface sliver paste material deposition on a crystal silicon wafer in sequence; depositing doped mediums in the partial opening on the back surface of the crystal silicon wafer, wherein the doped mediums comprise an aluminum element and at least one kind of third main group clement, and the solid solubility of the third main group clement in silicon is higher than that of the aluminum element; and performing back surface first electrode paste disposition, front surface second electrode paste disposition and sintering on the crystal silicon wafer after the wafer is deposited and doped with the mediums to obtain the partially-doped crystalline silicon solar cell. By virtue of doping of at least two kinds of third main group elements in the paste form and silicon, the back surface field intensity of the cell can be greatly improved and partial region recombination rate can be reduced, thereby greatly improving open-circuit voltage and filling factor, and finally highly improving the conversion efficiency of the cell.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a method for preparing a partially doped crystalline silicon solar cell and the resulting cell, in particular to a method for forming a doped back field by depositing a doping medium at a partial opening on the back of a crystalline silicon wafer And the method for preparing a partially doped crystalline silicon solar cell and the method prepares a partially doped crystalline silicon solar cell. Background technique [0002] With the development of science and technology, partial rear contact and rear passivation (PERC) solar cells have appeared, which is a newly developed high-efficiency solar cell and has received extensive attention from the industry. Its core is to cover the backlight surface of the silicon wafer with an aluminum oxide or silicon oxide film (5-100 nanometers) to passivate the surface and improve the long-wave response, thereby improving the conversion efficiency of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0288H01L31/0352H01L31/068H01L31/18
CPCH01L31/0288H01L31/035272H01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 吴坚王栩生蒋方丹邢国强
Owner CSI CELLS CO LTD
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