Coating Film Forming Method And Coating Film Forming Apparatus

A technology of coating film and coating liquid, which is applied to the device, coating, optics and other directions of coating liquid on the surface, and can solve the problem that the average film thickness of the coating film is not recorded

Active Publication Date: 2017-08-18
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this Patent Document 1, there is no description of a technology for adjusting the average film thickness of the formed coating film.

Method used

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  • Coating Film Forming Method And Coating Film Forming Apparatus
  • Coating Film Forming Method And Coating Film Forming Apparatus
  • Coating Film Forming Method And Coating Film Forming Apparatus

Examples

Experimental program
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Effect test

Embodiment

[0094] In order to verify the effect of the embodiment of the first aspect of the present invention, the following experiments were conducted. First, the timing chart shown in the embodiment is installed, the wafer W is rotated for processing, and the dry gas supply time from the dry gas supply nozzle 6 is 3, 5, 7, 9, 11, and 13 seconds as examples. Examples 1-1 to 1-6. In addition, the temperature of the drying gas was set to normal temperature (25°C). In addition, an example implemented in the same manner as in Example 1-1 except that the drying gas was not supplied from the drying gas supply nozzle 6 was taken as a comparative example.

[0095] And then to use Figure 8 The illustrated example of the dry gas supply unit, the supply time of the dry gas is set to 7 seconds, and the dry gas heated to 50° C. is supplied is Example 2.

[0096] Picture 9 The average film thickness of the resist film obtained in Comparative Example, Examples 1-1 to 1-6 and 2 is shown. The film thic...

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Abstract

The present invention provides a coating film forming method and a coating film forming apparatus. When a coating liquid is coated on a wafer to form the film, the thickness of the film is adjusted, and in a spin-coating method, a resist liquid rotates at a low speed after diffusing on the wafer by the high-speed rotation, so that the surface of the wafer W is uniform, at the same time, a drying gas is supplied to the surface of the wafer W, and accordingly, the mobility of the resist liquid is reduced. And then, the rotation speed of the wafer W is improved to dry a resist film, and by supplying the drying gas to the surface of the wafer, the mobility of the resist liquid is reduced, and accordingly, the thickness of the resist film is increased. Therefore, on the basis of adjusting the rotation speed of the wafer to adjust the thickness of the film, the thickness of the film can be adjusted by supplying the drying gas to the surface of the wafer W, and the film having the thickness of a wider range can be formed by utilizing the resist liquid.

Description

Technical field [0001] The present invention relates to a technique for forming a coating film by diffusing a coating liquid supplied to a substrate by rotating the substrate. Background technique [0002] When forming a coating film such as a resist film on a substrate, a method called spin coating is widely used. In this method, a resist as a coating liquid is supplied to the center of the surface of a substrate that is held by a spin chuck for rotation, and the centrifugal force is used to spread the resist liquid toward the periphery of the substrate. The substrate is rotated to dry the liquid film on the surface of the substrate to form a resist film. The completed film thickness (target film thickness) of the resist film is adjusted by the rotation speed of the substrate and the viscosity of the resist liquid. [0003] In the factory, it is required to use the same resist liquid, that is, resist liquids of the same type and viscosity of the resist liquid and the solvent, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05C11/08B05C11/00H01L21/027
CPCB05C11/00B05C11/08H01L21/027G03F7/162G03F7/168H01L21/67028H01L21/67109H01L21/6715H01L21/67253H01L21/02282H01L21/02307H01L21/02312H01L21/02623H01L21/68764B05C9/12B05C13/00
Inventor 吉原孝介丹羽崇文
Owner TOKYO ELECTRON LTD
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