Thin-film transistor, preparation method thereof, array substrate and display panel

Abstract

The invention discloses a thin-film transistor, a preparation method thereof, an array substrate and a display panel, wherein the light shading effect of the channel region of the thin-film transistor is enhanced and the illumination stability of the thin-film transistor is therefore improved. The working stability of the thin-film transistor is enhanced. According to the embodiment of the invention, the thin-film transistor comprises a light-shading layer, a buffer layer positioned on the light-shading layer, and a semiconductor layer positioned on the buffer layer. The semiconductor layer comprises three partial regions, namely a first conductor region, a channel region and a second conductor region. In a direction parallel to the semiconductor layer, the channel region is positioned between the first conductor region and the second conductor region. The thickness of the buffer layer enables the incident light passing through the buffer layer not to influence the first conductor region, the channel region and the second conductor region.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display panel. Background technique [0002] The oxide thin film transistor (TFT) gate of the top gate structure does not overlap with the source and drain, so it has a small parasitic capacitance (Cgs), which can be applied to high resolution and high refresh rate, Large-size organic light-emitting diode (OLED) display products with narrow borders and low power consumption. However, since the oxide in the oxide TFT is sensitive to light, the electrical characteristics of the oxide in the channel region of the TFT will change under light. The shading of the channel area, the TFT is prone to a large threshold voltage (V TH ) drift, which exceeds the compensation range of the compensation circuit, causing problems such as afterimages on the display screen. Therefore, when making an oxi...

AI Technical Summary

Problems solved by technology

In the prior art, the silicon oxide layer is set as a whole layer and its thickness is relatively thick. Setting the light-shielding layer can only block the light incident on the channel region in the direction perpendicular to the light-shielding layer, and the light in the direction not perpendicular to the light-shielding layer can still pass through the silicon oxide. The side of the layer is incident on the channel region, affecting the electrical properties of the oxide in the channel region

[0003] In summary, the top-gate structure oxide TFT in the prior art has a poor light-shielding effect on the channel region, and the working stability of the TFT is poor.

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