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Method and system for on-line monitoring cluster ion beam of pulse gas

A technology of pulsed gas and monitoring system, which is applied to the parts of particle separator tubes, electrical components, measuring devices, etc., and can solve problems such as tailing

Inactive Publication Date: 2017-09-01
YICHANG HOUHUANG VACUUM TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the implantation process, the monatomic ion channel effect easily leads to tailing phenomenon, and the deeper doping depth is unavoidable

Method used

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  • Method and system for on-line monitoring cluster ion beam of pulse gas
  • Method and system for on-line monitoring cluster ion beam of pulse gas
  • Method and system for on-line monitoring cluster ion beam of pulse gas

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with drawings and embodiments.

[0025] The invention provides a method for on-line monitoring of pulsed gas cluster ion beams, comprising the following steps:

[0026] (1) Applying the same voltage to all cluster ions in the cluster ion beam, so that cluster ions with different charge-to-mass ratios in the cluster ion beam have different velocities;

[0027] (2) The cluster ions are screened by the speed selector, wherein the monoatomic ions deviate from the light cluster ions with atomic number less than or equal to 100, and the heavy cluster ions with more than 100 atomic number are ejected from the exit of the speed selector in the original direction;

[0028] (3) Measure the ejected cluster ion beam with a Faraday cup, determine the number of cluster ions, and use a computer connected to the Faraday cup to display the ion beam current counting results in real time.

[0029] The cluster ions in st...

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Abstract

The present invention provides a method for on-line monitoring the cluster ion beam of a pulse gas. The method comprises the steps of firstly, applying the same voltage on all cluster ions in a cluster ion beam, and endowing cluster ions of different charge-mass ratios in the cluster ion beam with different velocities; screening the cluster ions by a velocity selector, wherein one part of the cluster ions deviate from an original direction and the other part of the cluster ions move along the original direction to be exported out of the velocity selector; measuring the exported cluster ion beam by using a Faraday cup, and determining the number of cluster ions; and displaying the counting result of the ion beam in real time by using a computer connected with the Faraday cup. The invention also provides a monitoring system. The system comprises an air inlet pipe, a pulse valve, a nozzle, a beam splitter, an ionization device, an accelerator, a velocity selector, an aperture and a Faraday cup. According to the technical scheme of the invention, the quality selection of pulse cluster ions is realized by using a continuously adjustable magnetic field. Meanwhile, the existence and the quantity of heavy cluster ions can be judged. The on-line separation, measurement and monitoring functions for ions are realized.

Description

technical field [0001] The invention relates to a method and system for online monitoring of pulsed gas cluster ion beams, belonging to the field of gas cluster ion beams. Background technique [0002] With the demand of computers and mobile communication equipment for device miniaturization and massive information, integrated circuits have long been ubiquitous, and the gate length of 22nm devices has been exceeded. This requires ultra-shallow doping of 10-7nm on silicon wafers. R & D and production must be inseparable from the ion implantation process. The ion implantation process is favored in the manufacture of advanced semiconductor devices due to its concentration controllability, accuracy of implantation depth, and stable repeatability. During the implantation process, the monatomic ion channel effect easily leads to the tailing phenomenon, and a deeper doping depth is unavoidable. In order to meet the requirement of increasingly shallow junction depth, while reducin...

Claims

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Application Information

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IPC IPC(8): G01T1/29H01J49/04
CPCG01T1/29H01J49/0422
Inventor 瓦西里·帕里诺维奇曾晓梅付德君
Owner YICHANG HOUHUANG VACUUM TECH
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