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Method for reducing silicon-based optical waveguide sidewall roughness

A silicon-based optical waveguide and rough side wall technology, which is applied in the direction of optical waveguide light guide, light guide, optics, etc., can solve the problem of large side wall roughness of silicon-based optical waveguide, achieve the reduction of side wall roughness and maintain the shape and size, the effect of reducing roughness

Active Publication Date: 2017-09-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The embodiment of the present application solves the problem of excessive roughness of the sidewall of the silicon-based optical waveguide in the prior art by providing a method for reducing the roughness of the sidewall of the silicon-based optical waveguide

Method used

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  • Method for reducing silicon-based optical waveguide sidewall roughness
  • Method for reducing silicon-based optical waveguide sidewall roughness
  • Method for reducing silicon-based optical waveguide sidewall roughness

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Providing a substrate; forming a silicon-based optical waveguide line on the substrate; hydrogen annealing the substrate containing the silicon-based optical waveguide line, the chamber pressure for the hydrogen annealing is 20 Torr, and the annealing temperature is 950°C, Among them, the heating rate is 2-5°C / s, the annealing time is: 10s, the annealing chamber is loaded with hydrogen as a protective gas, and the hydrogen flow rate is: 180L / min.

[0051] Under high-temperature annealing conditions, hydrogen will interact with the dangling bonds on the adjacent dimers on the surface of the silicon-based optical waveguide to promote the formation of silicon-hydrogen bonds. Due to the existence of the silicon-hydrogen bond, the silicon-hydrogen bond flow density vector tends to shift from a high-energy state to a low-energy state, which enhances the activity of silicon atoms on the surface of the waveguide and increases the atomic mobility, so as to better realize the smoothi...

Embodiment 2

[0053] The difference between Embodiment 2 and Embodiment 1 is that the pressure of the hydrogen annealing chamber is increased from 20 Torr in Embodiment 1 to a standard atmospheric pressure.

[0054] Example 2:

[0055] Providing a substrate; forming a silicon-based optical waveguide line on the substrate; hydrogen annealing the substrate containing the silicon-based optical waveguide line, the chamber pressure of the hydrogen annealing is 1atm, and the annealing temperature is 950°C, Among them, the heating rate is 2-5°C / s, the annealing time is: 10s, the annealing chamber is loaded with hydrogen as a protective gas, and the hydrogen flow rate is: 180L / min.

[0056] Under high-temperature annealing conditions, hydrogen will interact with the dangling bonds on the adjacent dimers on the surface of the silicon-based optical waveguide to promote the formation of silicon-hydrogen bonds. Due to the existence of the silicon-hydrogen bond, the silicon-hydrogen bond flow density vector t...

Embodiment 3

[0059] The difference between Example 3 and Example 1 is that the hydrogen annealing temperature is adjusted from 950° C. in Example 1 to 600° C., the annealing time is adjusted from 10 s to 30 s in Example 1, and an etching gas is introduced.

[0060] Example 3:

[0061] Providing a substrate; forming a silicon-based optical waveguide line on the substrate; hydrogen annealing the substrate containing the silicon-based optical waveguide line, the chamber pressure of the hydrogen annealing is 20 Torr, and the annealing temperature is 600°C, Among them, the heating rate is 2-5°C / s, the annealing time is: 30s, the annealing chamber is loaded with hydrogen as a protective gas, the hydrogen flow is: 180L / min, the etching gas hydrogen chloride is introduced, and the flow of hydrogen chloride is 10 sccm.

[0062] The etching gas selected in the present invention is preferably hydrogen chloride, but is not limited to hydrogen chloride. The flow rate of the hydrogen chloride is 10-200 sccm, ...

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Abstract

The invention belongs to the semiconductor integration technology field and discloses a method for reducing silicon-based optical waveguide sidewall roughness. The method for reducing the silicon-based optical waveguide sidewall roughness comprises steps of providing a substrate, forming a silicon-based optical waveguide line on the substrate, performing hydrogen annealing on the substrate containing the silicon-based optical waveguide line, wherein pressure of a chamber, on which hydrogen annealing is performed, is 20Torr-latmn. The method for reducing silicon-based optical waveguide sidewall roughness solves a problem that the silicon-based optical waveguide sidewall roughness is too big. The method of the invention is simple, can better maintain the features and sizes of the silicon-based optical waveguide lines and achieves a technical effect that the silicon-based optical waveguide sidewall roughness can be reduced under chamber pressure of 20Torr-latm.

Description

Technical field [0001] The invention relates to the technical field of semiconductor integration, and in particular to a method for reducing the sidewall roughness of a silicon-based optical waveguide. Background technique [0002] During the manufacturing process of silicon-based optical waveguide devices, dry etching is used to form waveguide lines. Excessive roughness of the sidewall of the silicon line after dry etching will directly increase the propagation loss of light and affect the performance of the waveguide device. The current methods for reducing roughness include: optimizing the etching process, wet oxidation-corrosion-wet oxidation-corrosion and other methods, but the improvement effect is limited. Summary of the invention [0003] The embodiment of the present application solves the problem of excessively large sidewall roughness of the silicon-based optical waveguide in the prior art by providing a method for reducing the sidewall roughness of the silicon-based o...

Claims

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Application Information

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IPC IPC(8): G02B6/13G02B6/12
CPCG02B6/12G02B6/13G02B2006/12169
Inventor 王桂磊张严波亨利·雷德森李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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