Array substrate, method for making the same, and display device

Abstract

The invention discloses an array substrate, a manufacturing method thereof and a display device. The manufacturing method of the array substrate comprises the following steps: providing a substrate; manufacturing a first functional layer on the substrate; manufacturing a first metal layer on the first functional layer, and defining a first-class electrode bar and a second-class electrode bar on the first metal layer, wherein the first-class electrode bar is used for separating the second-class electrode bar; manufacturing a second functional layer on the first metal layer, and forming a plurality of first through holes in the second functional layer along the thickness direction of the second functional layer; manufacturing a second metal layer on the second functional layer, and defining a third-class electrode bar on the second metal layer, wherein the third-class electrode bar is used for connecting the separated second-class electrode bars through first through holes so as to form a complete second-class electrode bar. Through the manner, tedious working procedures of manufacturing a grid line and a data line respectively by using the two metal layers can be avoided, and the cost is reduced.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] The structure of a liquid crystal display (LCD) is to place a liquid crystal cell between two parallel glass substrates, set a TFT (thin film transistor) on the lower substrate glass, and set a color filter on the upper substrate glass, and change the signal and voltage on the TFT. Control the rotation direction of the liquid crystal molecules, so as to achieve the purpose of controlling whether the polarized light of each pixel is emitted or not to achieve the display purpose. [0003] Among them, TFT can be divided into two types: polysilicon (Poly-Si) and amorphous silicon (a-Si). The difference between the two lies in the characteristics of transistors. The active layer of low temperature polysilicon technology LTPS (Low Temperature Poly-silicon) is made of amorph...

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Problems solved by technology

[0004] In the low-temperature polysilicon (LTPS) thin-film transistor (TFT) touch process (Touch), it is usually necessary to use metal to form the necessary wiring patterns such as the gate, source and drain, and touch electrodes. In conventional operations, the metal pattern of each layer The formation needs to be cleaned, coated, yellowed, etched, degummed and other processes. Due to the many processes, the production cost of the product is also high

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