Plasma processing method
A technology of plasma and treatment method, which is applied in the field of plasma treatment and can solve problems such as defective final products
Active Publication Date: 2017-09-19
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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- Claims
- Application Information
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Problems solved by technology
Therefore, in the subsequent etching process, additional parts of the substrate will be etched, which is likely to cause defects in the final product.
Method used
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Embodiment Construction
[0067] The plasma processing method according to the embodiment of the present disclosure includes a step of adhering a resin film to a first main surface of a substrate having a first main surface and a second main surface opposite to the first main surface (adhering step). The adhering step is not a step of applying a liquid resist to form a resin layer, but a step of adhering a previously prepared resin film to the first main surface of the substrate. At this time, minute voids may be formed between the resin film and the first main surface, but since the voids can be reduced in the subsequent first plasma process, it is not necessary to perform the adhesion process in a reduced-pressure environment.
[0068] The type, structure, and the like of the resin film are not particularly limited as long as the resin film has adhesiveness capable of adhering to the first main surface of the substrate. The resin film may include only the adhesive layer having adhesiveness, but may h...
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Abstract
Provided is a plasma processing method capable of realizing refined patterning with simple processes. The plasma processing method includes an attaching process of attaching a resin film to a first main surface of a substrate which is provided with the first main surface and a second main surface on an opposite side of the first main surface and a patterning process of forming a mask, which includes an opening exposing a region to be processed of the substrate, by patterning the resin film. The plasma processing method includes a first plasma process of generating first plasma of first gas in a depressurized atmosphere including the first gas, exposing the mask to the first plasma, and reducing a void between the mask and the first main surface. The plasma processing method includes a second plasma process of generating second plasma from second gas in atmosphere including the second gas, exposing the region to be processed exposed from the opening to the second plasma, and etching the region to be processed.
Description
technical field [0001] The present disclosure relates to a plasma processing method in which a step of patterning a resin film adhered to a main surface of a substrate and a step of plasma processing the substrate are combined. Background technique [0002] Patterning using a lamination mask (eg, dry film resist) is used to simplify the manufacturing process of semiconductor circuits, electronic circuits, and the like, and application of this patterning is required in many ways. However, in the process of adhering the lamination mask to the main surface of the substrate, air tends to intervene between the lamination mask and the main surface of the substrate, and microscopic voids are inevitably formed (see Patent Document 1). In order to reduce this phenomenon, it is necessary to carry out the adhesion process in a highly depressurized environment, but this leads to an increase in cost and a complication of the process. In addition, the lamination mask itself has minute un...
Claims
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IPC IPC(8): H01L21/3065
CPCH01L21/3065H01L21/30655H01L21/67109H01L21/67115H01L21/6831H01L21/68742H01L21/68785H01L21/3081H01L21/3086H01L21/78H01L21/268H01L21/31133
Inventor 松原功幸针贝笃史伊藤彰宏
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD