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Fluorine injection technology stability test method based on capacitor structure

A technology of stability testing and capacitance structure, which is applied in the field of microelectronics, can solve the problems of lack of research on the stability monitoring of fluorine ions in the barrier layer, and achieve the effects of simple and reliable measurement methods, accurate test results, and mature and stable process technology

Active Publication Date: 2017-09-19
XIDIAN UNIV
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  • Abstract
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Problems solved by technology

[0005] So far, there is still a lack of research on the stability monitoring of fluorine ions in the barrier layer under electric field

Method used

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  • Fluorine injection technology stability test method based on capacitor structure
  • Fluorine injection technology stability test method based on capacitor structure
  • Fluorine injection technology stability test method based on capacitor structure

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Embodiment Construction

[0031] The specific implementation of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0032] refer to figure 1 , the implementation steps of the present invention are as follows:

[0033] Step 1, making fluorine injection capacitors.

[0034] 1a) Select a semiconductor material which is substrate, nucleation layer, buffer layer, insertion layer and barrier layer from bottom to top, and deposit a metal electrode on the semiconductor material to prepare an ohmic electrode;

[0035] 1b) The CF 4 The gas is injected into the barrier layer, and the CF 4 The gas is decomposed to generate fluorine ions, and the fluorine ions are implanted into the barrier layer;

[0036] 1c) Depositing a metal electrode on the position of the fluorine ion implantation barrier layer, and...

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Abstract

The present invention discloses a fluorine injection technology stability test method based on a capacitor structure. The problem of the current monitoring of the fluorine injection technology stability is mainly solved. The realization scheme comprises: preparing a fluorine injection capacitor, and measuring the flat-band voltage Vfb(t0) of the capacitor; applying reversal stress with the duration of tk to the capacitor, and performing monitoring and statistics of current I1(t) of the ohmic electrode and the current I2(t) of the gate electrode of the capacitor; and finally measuring the flat-band voltage Vfb(tk-1) and the flat-band voltage Vfb(tk) of the capacitor after applying the stress, and calculating and obtaining the equivalent position d(tk) of an ionization fluorinion in a capacitor barrier layer spacing from the gate electrode. The fluorine injection technology stability test method based on the capacitor structure is easy to prepare a test capacitor, simple and reliable in test method and accurate in test result, and can be used for improving the fluorine injection technology stability and the long-term reliability of a device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for testing the stability of a fluorine injection process, which is used to improve the stability of the fluorine injection process and the long-term reliability of devices. Background technique [0002] At the heterostructure interface of the high electron mobility transistor HEMT device, there is a high-concentration, high-mobility two-dimensional electron gas, which is in a conduction state when no external voltage bias is applied. This HEMT device is called depletion. type HEMT devices. Devices made with these characteristics have great advantages in the preparation of high-frequency, high-power electronic devices. However, due to the requirements of reducing static power consumption and realizing high-speed logic circuits, enhanced HEMT devices are often required to ensure that the channel of the device is in an off state without external bias....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/14
Inventor 郑雪峰王士辉王颖哲吉鹏王冲马晓华郝跃
Owner XIDIAN UNIV
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