Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure and a method of manufacturing the same are provided. According to an embodiment, a method includes: providing a semiconductive substrate; forming a doped region in the semiconductive substrate; forming a trench in the doped region; forming a capacitor in the trench, the capacitor comprising alternatingly arranged electrodes and dielectric layers; depositing a first dielectric material in the trench and over the capacitor; etching the first dielectric material to form a spacer on a sidewall of a topmost dielectric layer of the capacitor; and depositing a core portion in the trench and laterally surrounded by the spacer.

Description

technical field Background technique [0001] Electronic equipment including semiconductor devices are essential to many modern applications. Technological advances in materials and design have produced many generations of semiconductor devices, each with smaller and more complex circuits than the previous generation. In the course of advancement and innovation, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component that can be produced using a fabrication process) has decreased. Such advancements have increased the complexity of handling and manufacturing semiconductor devices. [0002] In modern integrated circuit (IC) fabrication, on-chip capacitors are available for a large number of applications such as dynamic random access memory (DRAM), voltage controlled oscillators, and operational amplifiers. The capacitor can be used to provide decoupling between the circuitry and unwante...

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Problems solved by technology

However, as chips are progressively made thinner, the stiffness and robustness of the wafer containing the chip may be more easily compromised because the wafer, together with the embedded features, does not provide sufficient stress resistance

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