Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the present invention provides a semiconductor structure and a manufacturing method thereof, which includes a semiconductive substrate and a doped region in the semiconductive substrate. The doped region has a conductivity type opposite to that of the semiconductive substrate. The semiconductor structure also includes a capacitor in the doped region, where the capacitor includes a plurality of electrodes and the plurality of electrodes are insulated from each other. The semiconductor structure further includes a plug in the capacitor and surrounded by a plurality of electrodes.

Description

technical field Background technique [0001] Electronic equipment including semiconductor devices are essential to many modern applications. Technological advances in materials and design have produced many generations of semiconductor devices, each with smaller and more complex circuits than the previous generation. In the course of advancement and innovation, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component that can be produced using a fabrication process) has decreased. Such advancements have increased the complexity of handling and manufacturing semiconductor devices. [0002] In modern integrated circuit (IC) fabrication, on-chip capacitors are available for a large number of applications such as dynamic random access memory (DRAM), voltage controlled oscillators, and operational amplifiers. The capacitor can be used to provide decoupling between the circuitry and unwante...

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Problems solved by technology

However, as chips are progressively made thinner, the stiffness and robustness of the wafer containing the chip may be more easily compromised because the wafer, together with the embedded features, does not provide sufficient stress resistance

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